Abstract:Thin-film polycrystalline silicon (pc-Si) on foreign (non-silicon) substrates has been researched by various research groups for the production of photovoltaic cells. High quality pc-Si deposition on foreign substrates with superior optical properties is considered to be the main hurdle in cell fabrication. Metal induced crystallization (MIC) is one of the renowned techniques used to produce this quality of material. In the current study, an aluminum induced crystallization (AIC) method was adopted to produce pc-Si thin-film on aluminum nitride (AlN) substrate by a seed layer approach. Aluminum and a-Si layer were deposited using an e-beam evaporator. Various annealing conditions were used in order to investigate the AIC grown pc-Si seed layers for process optimization. The effect of thermal annealing on grain size, defects preferentially crystallographic orientation of the grains were analyzed. Surface morphology was studied using an optical microscope. Poly-silicon film with a crystallinity fraction between 95-100% and an FWHM between 5-6 cm−1 is achievable at low temperatures and for short time intervals. A grain size of about 10 micron can be obtained at a low deposition rate on an AIN substrate. Similarly, Focused ion beam (FIB) also showed that at 425 °C sample B and at 400 °C sample A were fully crystallized. The crystalline quality of pc-Si was evaluated using μ-Raman spectroscopy as a function of annealed conditions and Grazing incidence X-ray diffraction (GIXRD) was used to determine the phase direction of the pc-Si layer. The current study implicates that a poly-silicon layer with good crystallographic orientation and crystallinity fraction is achievable on AIN substrate at low temperatures and short time frames.

Preparation of Polycrystalline Silicon of 100μm Size Large Grain Thin Films by Metal Induced Crystallization

Preparation of High Quality Polycrystalline Silicon Thin Films by Aluminum-Induced Crystallization

Super large grain size of poly-Si obtained by using the solid-phase crystallization method

Nickel Induced Crystallization of Amorphous Silicon Thin Films

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Fractal growth of amorphous silicon crystallization induced by aluminum

Impact of Alumina Coatings on Aluminum-Induced Crystallization of Polycrystalline Silicon Films

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

Optimization of Material Structure of Ploy-Si Thin Film Based on Al Induced Crystallization

Influence of Substrate on Crystal Orientation of Large-Grained Si Thin Films Formed by Metal-Induced Crystallization

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Poly-crystalline thin-film by aluminum induced crystallization on aluminum nitride substrate

Crystallization of amorphous silicon thin films: The effect of rapid thermal processing pretreatment

Crystallization of Sputtered Amorphous Silicon Induced by Silver–copper Alloy with High Crystalline Volumeratio

Study on the properties of nanocrystalline silicon formed by aluminum-induced crystallization at low temperature

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Crystallization of Hydrogenated Amorphous Silicon Thin Films Using Combined Continuous Wave Laser and Thermal Annealing

Study on Solid Phase Crystallization of Silicon Films Deposited on Different Substrates

Study on Al-induced Crystallization of Al/a-Si:H Bilayer Thin Film

Precipitation and Crystallization of Nanometer Si Clusters in Annealed Si-Rich Sio2 Films