Abstract:Thin-film polycrystalline silicon (pc-Si) on foreign (non-silicon) substrates has been researched by various research groups for the production of photovoltaic cells. High quality pc-Si deposition on foreign substrates with superior optical properties is considered to be the main hurdle in cell fabrication. Metal induced crystallization (MIC) is one of the renowned techniques used to produce this quality of material. In the current study, an aluminum induced crystallization (AIC) method was adopted to produce pc-Si thin-film on aluminum nitride (AlN) substrate by a seed layer approach. Aluminum and a-Si layer were deposited using an e-beam evaporator. Various annealing conditions were used in order to investigate the AIC grown pc-Si seed layers for process optimization. The effect of thermal annealing on grain size, defects preferentially crystallographic orientation of the grains were analyzed. Surface morphology was studied using an optical microscope. Poly-silicon film with a crystallinity fraction between 95-100% and an FWHM between 5-6 cm−1 is achievable at low temperatures and for short time intervals. A grain size of about 10 micron can be obtained at a low deposition rate on an AIN substrate. Similarly, Focused ion beam (FIB) also showed that at 425 °C sample B and at 400 °C sample A were fully crystallized. The crystalline quality of pc-Si was evaluated using μ-Raman spectroscopy as a function of annealed conditions and Grazing incidence X-ray diffraction (GIXRD) was used to determine the phase direction of the pc-Si layer. The current study implicates that a poly-silicon layer with good crystallographic orientation and crystallinity fraction is achievable on AIN substrate at low temperatures and short time frames.

Optimization of Material Structure of Ploy-Si Thin Film Based on Al Induced Crystallization

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Polycrystalline silicon thin films on glass by aluminum-induced crystallization

[Preparation and Characterization of Poly-Si Films on Different Topography Substrates by AIC].

Poly-crystalline thin-film by aluminum induced crystallization on aluminum nitride substrate

Al-Induced Crystallization Growth of Si Films by Inductively Coupled Plasma Chemical Vapour Deposition

Preparation of High Quality Polycrystalline Silicon Thin Films by Aluminum-Induced Crystallization

Influence of Precursor A-Si:H Dehydrogenation on the Aluminum Induced Crystallization Process

Influence of Aluminum Deposition Temperature on the Property of Polycrystalline Silicon Films by Aluminum-Induced Crystallization

Low-Temperature (< 100 Degrees C) Poly-Si Thin Film Fabrication on Glass

Impact of Alumina Coatings on Aluminum-Induced Crystallization of Polycrystalline Silicon Films

Preparation and characterization of polycrystalline Si films obtained by metal induced crystallization at low temperature

Preparation of Polycrystalline Silicon of 100μm Size Large Grain Thin Films by Metal Induced Crystallization

Study on Performance of P-Si Thin Film Fabricated by Aluminum Induced Lateral Crystallization at Low Temperature

Deposition and Growth Mechanism of Low-Temperature Crystalline Silicon Films on Inexpensive Substrates

Structural Analysis of Polycrystalline Silicon Thin Films Produced by Two Different ICPCVD Approaches

Influence of Substrate on Crystal Orientation of Large-Grained Si Thin Films Formed by Metal-Induced Crystallization

Aluminum-Induced Crystallization Of Pecvd Amorphous Silicon At 120 Degrees C

Aluminum-Induced Crystallization of PECVD Amorphous Silicon at 120°C

Aluminum Induced Lateral Crystallization of Amorphous Silicon Thin Films

Effects of Post-Annealing Treatment on the Structural and Optical Properties of Cubic Mg Chi Zn1-Chi O Thin Films Grown on Sapphire