Abstract:Carbon-rich hydrogenated amorphous silicon carbide (a-Si(1-x)C(x):H) films were deposited by plasma enhanced chemical vapor deposition (PECVD) using silane, ethylene and hydrogen as gas sources. The effect of relatively low hydrogen dilution on the properties of as-deposited samples was investigated. A variety of techniques including Scanning Electron Microscope (SEM), Fourier transform infrared spectroscopy (FTIR), Raman scattering (RS), UV-VIS spectrophotometer and photoluminescence (PL) spectroscopy were used to characterize the grown films. The deposition rate decreases with hydrogen dilution. The silicon to carbon ratio increases slightly with the addition of hydrogen. The phenomenon can be attributed to the dissipation of power density caused by hydrogen dilution. Raman G peak position shifting to a lower wave number indicates that hydrogen dilution reduces the size and concentration of sp(2) carbon clusters, which is caused by the etching effect by atomic hydrogen. The optical band gap, which is controlled by the sp(2) carbon clusters and Si/C ratio, changes unmonotonously. The as-deposited samples exhibited a blue-green room-temperature (RT) PL well visible to the naked eye with UV excitation. The PL band can be attributed to the radiative recombination of electron-hole pairs within small sp(2) clusters containing C=C and C-H units in a sp(3) amorphous matrix.

Raman Characterization of the Structural Evolution in Amorphous and Partially Nanocrystalline Hydrogenated Silicon Thin Films Prepared by PECVD

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

Structure and Properties of Hydrogenated Amorphous Silicon Carbide Thin Films Deposited by Pecvd

Nmr-Studies of Hydrogen Microstructures in Hydrogenated Amorphous-Silicon Films

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Growth of Si-C-H film by RF plasma enhanced chemical vapor deposition

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Analysis of Silicon Thin Film Prepared at Different Hydrogen Dilutions by VHF-PECVD

Investigation of nanocrystallization of a-Si1 - XGe x:H thin films diluted with argon in the PECVD system

Resonant Raman Scattering in Hydrogenated Amorphous Silicon Films

Very High Hydrogen Dilution Induced Novel Phenomena of Electronic Transport Properties in Hydrogenated Microcrystalline Silicon-Germanium Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Method

Structure Studies of Microcrystalline Silicon Thin Film Using Raman Scattering and Photo Thermal Deflection Spectra

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Structural properties of hydrogenated amorphous silicon carbide alloys

Microstructure Characterization of Microcrystalline Silicon Thin Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition by Spectroscopic Ellipsometry

Multiphase Structure of Hydrogenated Amorphous Silicon Carbide Thin Films

Raman and Photoluminescence Characterization of Hydrogenated Amorphous Silicon Carbide Alloys with Low Carbon Concentrations

Blue-green luminescence and SERS study of carbon-rich hydrogenated amorphous silicon carbide films with multiphase structure