Abstract:Carbon-rich hydrogenated amorphous silicon carbide (a-Si(1-x)C(x):H) films were deposited by plasma enhanced chemical vapor deposition (PECVD) using silane, ethylene and hydrogen as gas sources. The effect of relatively low hydrogen dilution on the properties of as-deposited samples was investigated. A variety of techniques including Scanning Electron Microscope (SEM), Fourier transform infrared spectroscopy (FTIR), Raman scattering (RS), UV-VIS spectrophotometer and photoluminescence (PL) spectroscopy were used to characterize the grown films. The deposition rate decreases with hydrogen dilution. The silicon to carbon ratio increases slightly with the addition of hydrogen. The phenomenon can be attributed to the dissipation of power density caused by hydrogen dilution. Raman G peak position shifting to a lower wave number indicates that hydrogen dilution reduces the size and concentration of sp(2) carbon clusters, which is caused by the etching effect by atomic hydrogen. The optical band gap, which is controlled by the sp(2) carbon clusters and Si/C ratio, changes unmonotonously. The as-deposited samples exhibited a blue-green room-temperature (RT) PL well visible to the naked eye with UV excitation. The PL band can be attributed to the radiative recombination of electron-hole pairs within small sp(2) clusters containing C=C and C-H units in a sp(3) amorphous matrix.

Analysis of Silicon Thin Film Prepared at Different Hydrogen Dilutions by VHF-PECVD

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

A Combinatorial Analysis of Deposition Parameters and Substrates on Performance of Μc-Si:H Thin Films by VHF-PECVD

Fabrication of Hydrogenated Microcrystalline Silicon Thin Films at Low Temperature by VHF-PECVD

Study on the Properties of Silicon-based Films with High Growth Rate Fabricated by VHF-PECVD at Low Temperature

Evolution of Infrared Spectra and Optical Emission Spectra in Hydrogenated Silicon Thin Films Prepared by VHF-PECVD

Structure Studies of Microcrystalline Silicon Thin Film Using Raman Scattering and Photo Thermal Deflection Spectra

Study of XRD on Microcrystalline Silicon Thin Films Prepared by RF-PECVD

Microstructure Characterization of Microcrystalline Silicon Thin Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition by Spectroscopic Ellipsometry

MICROSTRUCTURES OF THE MICRO-CRYSTALLINE SILICON THIN FILMS PREPARED BY HOT WIRE CHEMICAL DEPOSITION WITH HYDROGEN DILUTION

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

Stability of Thin Films of Microcrystalline Silicon under Light Soaking

Effect of Silane/hydrogen Ratio on Microcrystalline Silicon Thin Films by Remote Inductively Coupled Plasma

The Study of Microcrystalline Silicon Thin Films Prepared by PECVD

Study of microstructure and defects in hydrogenated microcrystalline silicon films

Optical and Photoelectrical Characterization of As-Deposited and Annealed Pecvd Polysilicon Thin Films

Effect of Silane Concentration on Intrinsic Microcrystalline Silicon

Raman Characterization of the Structural Evolution in Amorphous and Partially Nanocrystalline Hydrogenated Silicon Thin Films Prepared by PECVD

Analysis on Steady Plasma Process of High-Rate Microcrystalline Silicon by Optical Emission Spectroscopy

Very High Hydrogen Dilution Induced Novel Phenomena of Electronic Transport Properties in Hydrogenated Microcrystalline Silicon-Germanium Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Method

Hydrogenated Microcrystalline Silicon Films Prepared by VHF-PECVD and Single Junction Solar Cell