Abstract:Highly doped p-type microcrystalline silicon thin films are fabricated by a low-frequency inductively coupled plasma at a low temperature of 150 °C. The effects of radio frequency power on the microstructures of thin films such as x-ray diffraction patterns, crystalline volume fraction, grain size and surface morphology are investigated. The deposition rate of the thin films increases from 22 to 35 nm min−1 when the power increases from 1200 to 2000 W. The optical properties of the thin films are studied using UV–VIS–near IR spectroscopy. The Hall effect measurements show that the fabricated thin films present a high doping concentration from 1.2 × 1019 to 1.3 × 1020 cm−3 with increasing power from 1200 to 2000 W. The effect of power on these properties of thin films, especially for high doping, is understood from the impact of power on the plasma properties of the species in the chamber such as the electron energy distribution function (EEDF), electron density and Debye length. The EEDF presents an evolution with increasing power accompanying an increase in electron density and a decrease in Debye length. It is found that the higher the electron density, the higher is the doping concentration. This shows that high electron density is favourable for heavy doping. In fact, the high electron density is determined by the electromagnetic (H) mode of the low-frequency inductively coupled plasma.

Effects of Discharge Power on Silicon-based Films Fabricated by VHF-PECVD

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Effect of Silane Concentration on Intrinsic Microcrystalline Silicon

Analysis of Silicon Thin Film Prepared at Different Hydrogen Dilutions by VHF-PECVD

Modulation Effect of Plasma Power on Crystalline Volume Fraction of Silicon Films in the Phase Transition from A-Si:H to /spl Mu/c-Si:H

Microstructure Characterization of Microcrystalline Silicon Thin Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition by Spectroscopic Ellipsometry

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Highly Doped P-Type Microcrystalline Silicon Thin Films Fabricated by A Low-Frequency Inductively Coupled Plasma at A Low Temperature

Research On Silane Depletion Status During The Deposition Of Silicon Thin Films By High-Pressure Pecvd

The Power Source Effect on SiOx Coating Deposition by Plasma Enhanced Chemical Vapor Deposition

THE OES IN DEPOSITING MICROCRYSTALLINE SILICON MATERIAL BY RF-PECVD

Effects of Drift Due to Chamber's Long-time Usage on Microcrystalline Silicon Properties

Cold Deposition of Large-Area Amorphous Hydrogenated Silicon Films by Dielectric Barrier Discharge Chemical Vapor Deposition

New Results of Nc-Si:H Films Prepared by Hydrogen-Diluted Silane in A Triode Pecvd System

Effect of Substrate Temperature and Pressure on Properties of Micro Crystalline Silicon Films

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Fabrication of Microcrystalline Silicon Films by VHF-PECVD and Their Microstructure Study

A PRELIMINARY STUDY ON MICROCRYSTALLINE SILICON MATERIALS AND SOLAR CELLS FABRICATED BY VHF-PECVD

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Structure and Properties of Hydrogenated Amorphous Silicon Carbide Thin Films Deposited by Pecvd