Abstract:Microcrystalline silicon film has attracted significant attention in solar cells for its wavelength response and stability,plasma enhanced chemical vapor deposition(PECVD) allows the production of a wide range of silicon thin films with varying degrees of disorder.In this paper,microcrystalline silicon films were fabricated by using a 27.12MHz PECVD system.The influence behavior of deposition parameters was systematically investigated by using Raman spectroscopy,X-ray diffraction,scanning electron microscopy,atomic force microscopy,and Fourier transform infrared spectroscopy.The epitaxial growth mechanism is discussed,the formation and evolvement of the incubation layer is analyzed,including the crystalline fraction and column grain growth.The Raman and SEM observations display the different features between the bottom and top surfaces of a silicon film.In the initial nucleus-formation process,the incubation layer embedded with clusters and nanocrystals is first formed having a thickness of several tens nanometers,then the amorphous fraction gradually reduces and a microcrystalline phase forms during the following process.The protocrystalline grains are self-assembled into a large size,the column grains with the diameter of about one hundred nanometers are formed along the growth direction.FTIR data reveal the absorption band at 2100cm-1 arises from the SiH-bonds located at grain boundaries or cluster's surfaces.In addition,the optimized plasma energy is benefit to restrain oxygen effect during growth process.It is important for a high quality film to systematically and comprehensively adjust the growth parameters including temperature,pressure,RF power,and SiH4/H2 ratio,even the radio frequency.The present investigation is helpful to understand the microstructure features and epitaxial growth mechanism of microcrystalline silicon films,and useful to improve their quality and properties for the applications in solar cells.

Effects of Drift Due to Chamber's Long-time Usage on Microcrystalline Silicon Properties

Selected Two-Dimensional Effects in Gas Immersion Laser Doping of Unpatterned Silicon

Influence of Substrate on the Growth of Microcrystalline Silicon Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition

Effects of Total Gas Flow Rates on the High Rate Growth Microcrystalline Silicon Thin Films

Effect of Silane Concentration on Intrinsic Microcrystalline Silicon

Effects of Discharge Power on Silicon-based Films Fabricated by VHF-PECVD

Effects of Ethylene doping on Deposition Rate and Surface Profile of Silicon Films

The Change of Transport Mechanism in Μc-Si:H Films Induced by H2-diluted Silane Plasma

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Formation Mechanism of Incubation Layers in the Initial Stage of Microcrystalline Silicon Growth by PECVD

Characteristics of microcrystalline silicon films grown by plasma enhanced chemical vapor deposition

The Study of Microcrystalline Silicon Thin Films Prepared by PECVD

Analysis of Heating Effect on the Process of High Deposition Rate Microcrystalline Silicon

Effects of Chamber Pressures on the Passivation Layer of Hydrogenated Nano-Crystalline Silicon Mixed-Phase Thin Film by Using Microwave Annealing

Single-chamber Deposition of Intrinsic Microcrystalline Silicon Thin Film and Its Application in Solar Cells

Influence of Total Gas Flow Rate on Microcrystalline Silicon Films Prepared by VHF-PECVD

A New Method Used to Control the Structure of High Rate Microcrystalline Silicon Thin Films

Modulation Effect of Plasma Power on Crystalline Volume Fraction of Silicon Films in the Phase Transition from A-Si:H to /spl Mu/c-Si:H

Growth of Poly-Crystalline Si Films on Flexible Substrate by Hot Wire Chemical Vapor Deposition

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

Research On Silane Depletion Status During The Deposition Of Silicon Thin Films By High-Pressure Pecvd