Abstract:Carbon-rich hydrogenated amorphous silicon carbide (a-Si(1-x)C(x):H) films were deposited by plasma enhanced chemical vapor deposition (PECVD) using silane, ethylene and hydrogen as gas sources. The effect of relatively low hydrogen dilution on the properties of as-deposited samples was investigated. A variety of techniques including Scanning Electron Microscope (SEM), Fourier transform infrared spectroscopy (FTIR), Raman scattering (RS), UV-VIS spectrophotometer and photoluminescence (PL) spectroscopy were used to characterize the grown films. The deposition rate decreases with hydrogen dilution. The silicon to carbon ratio increases slightly with the addition of hydrogen. The phenomenon can be attributed to the dissipation of power density caused by hydrogen dilution. Raman G peak position shifting to a lower wave number indicates that hydrogen dilution reduces the size and concentration of sp(2) carbon clusters, which is caused by the etching effect by atomic hydrogen. The optical band gap, which is controlled by the sp(2) carbon clusters and Si/C ratio, changes unmonotonously. The as-deposited samples exhibited a blue-green room-temperature (RT) PL well visible to the naked eye with UV excitation. The PL band can be attributed to the radiative recombination of electron-hole pairs within small sp(2) clusters containing C=C and C-H units in a sp(3) amorphous matrix.

The Change of Transport Mechanism in Μc-Si:H Films Induced by H2-diluted Silane Plasma

Transport Properties of Μc-Si:H Films Prepared by Very High Hydrogen-Diluted Silane Plasma

Transport properties of µc-Si:H films prepared by very high hydrogen-diluted silane plasma

Very High Hydrogen Dilution Induced Novel Phenomena of Electronic Transport Properties in Hydrogenated Microcrystalline Silicon-Germanium Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Method

Electronic transport properties in a-Si : H, mu c-Si : H and mu c-SiGe : H films studied by traveling wave method

Measurement of Electron-Density and Mobility in P-Doped A-Si-H and Mc-Si-H Films

The Effect of Hydrogen Species on the Electronic Properties of Nc-Si:H Prepared in A Triode Pecvd System

New Results of Nc-Si:H Films Prepared by Hydrogen-Diluted Silane in A Triode Pecvd System

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Modulation Effect of Plasma Power on Crystalline Volume Fraction of Silicon Films in the Phase Transition from A-Si:H to /spl Mu/c-Si:H

Change of Material Properties in the Process from P-a-SiC:H to P-μc-Si:H

Effects of Drift Due to Chamber's Long-time Usage on Microcrystalline Silicon Properties

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

Microstructures and Carrier Transport Behaviors of Nanocrystalline Silicon Thin Films

High Electron Mobility in Well Ordered and Lattice-Strained Hydrogenated Nanocrystalline Silicon

Evaluation Of Microstructures And Carrier Transport Behaviors During The Transition Process From Amorphous To Nanocrystalline Silicon Thin Films

Microstructure Characterization of Microcrystalline Silicon Thin Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition by Spectroscopic Ellipsometry

Structural, optical, and electronic properties of hydrogenated polymorphous silicon films deposited from silane–hydrogen and silane–helium mixtures

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

The influence of the growth conditions on the structural and optical properties of hydrogenated amorphous silicon carbide thin films

Analysis of Silicon Thin Film Prepared at Different Hydrogen Dilutions by VHF-PECVD