Abstract:In this work we investigated a novel approach to elaborate hydrogenated nanocrystalline silicon (nc-Si:H) thin films using microwave plasma enhanced chemical vapor deposition (MW-PECVD) system, used as an efficient silicon surface passivation layer. We studied the effect of the hydrogen flow rate on the structural, morphological and optical properties of nc-Si:H thin films. Obtained results confirm its crucial role on the properties of the resulted thin films. Optimized hydrogen flow rate allowed an hydrogenated nanocrystallites (nc-Si:H) with around 80% of a crystallization phase which is a high percentage compared to previous works. The XRD analysis was supported by Raman spectroscopy, indicating the pure phase of cubic structure with a preferred orientation along (111) plane. The average grain size was found to vary between 7 and 16 nm. The surface morphology of the deposited thin films was carried out using atomic force microscopy (AFM), showing a clear dependence of surface roughness with the hydrogen flow rate. The refractive index of the obtained thin films was evaluated by means of the Bruggeman effective medium approximation (BEMA). The optical band gap and the porosity of the films were deduced from spectroscopic ellipsometry measurements and results were found strongly correlated with XRD and AFM analysis respectively. Moreover, the minority carrier lifetime measurements (MCL) prove the effectiveness of the subjected treatment for a high quality nc-Si:H thin film and its crucial role as a passivation layer of crystalline silicon substrate, revealing a significant improvement of their optoelectronic properties.

New Results of Nc-Si:H Films Prepared by Hydrogen-Diluted Silane in A Triode Pecvd System

The Effect of Hydrogen Species on the Electronic Properties of Nc-Si:H Prepared in A Triode Pecvd System

Very High Hydrogen Dilution Induced Novel Phenomena of Electronic Transport Properties in Hydrogenated Microcrystalline Silicon-Germanium Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Method

The Change of Transport Mechanism in Μc-Si:H Films Induced by H2-diluted Silane Plasma

Structure Of Nc-Si : H Films

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

Transport properties of µc-Si:H films prepared by very high hydrogen-diluted silane plasma

Transport Properties of Μc-Si:H Films Prepared by Very High Hydrogen-Diluted Silane Plasma

Raman Characterization of the Structural Evolution in Amorphous and Partially Nanocrystalline Hydrogenated Silicon Thin Films Prepared by PECVD

Influence of RF power on structural optical and electrical properties of hydrogenated nano-crystalline silicon (nc-Si:H) thin films deposited by PE-CVD

Optimized nc-Si:H thin films with enhanced optoelectronic properties prepared by micro-waves PECVD used as an effective silicon surface passivation layer

Analysis of Silicon Thin Film Prepared at Different Hydrogen Dilutions by VHF-PECVD

Growth of Si-C-H film by RF plasma enhanced chemical vapor deposition

Effects of Hydrogen-Dilution on Opto-Structural Properties of Hot-wire CVD Grown a-Si:H/nc-Si:H Multilayer for Photovoltaics

Nanocrystalline Si Films and Devices Produced Using Chemical Annealing with Helium

Preparation of noncrystalline silicon carbon films by using heavily hydrogen diluted silane and ethene

Effects of Discharge Power on Silicon-based Films Fabricated by VHF-PECVD

Electroluminescense and photoluminescense of nano-crystalline Si:H films

Nmr-Studies of Hydrogen Microstructures in Hydrogenated Amorphous-Silicon Films