Change of Material Properties in the Process from P-a-SiC:H to P-μc-Si:H

朱锋,赵颖,张晓丹,孙建,魏长春,任慧智,耿新华

DOI: https://doi.org/10.3969/j.issn.1000-985x.2004.02.005

2004-01-01

Abstract:On the basis of P-a-SiC:H thin film, increasing hydrogen dilution of the SiH_4 and dcreasing the dopant carbon and boron by degrees, the material deposited by RF-PECVD was transformed from amorphous silicon to microcrystalline silicon. After gaining the intrinsic microcrystalline silicon, the B_2H_6 was doped in it.Thus,we gained the P-μc-Si:H thin film materials with the dark conductivity of 5.22×10~(-3)S/cm,the optical band gap over 2.0eV.The performance of silicon materials is changed as the dopant concentration is increased. In the process, we could observe the effect of carbon and boron on materials, which restrain the crystalline.