Abstract:Intrinsic, P- and B-doped hydrogenated amorphous silicon thin films were prepared by plasma-enhanced chemical vapor deposition technique. As-deposited samples were thermally annealed at the temperature of 800°C to obtain the doped nanocrystalline silicon (nc-Si) films. The microstructures, optical and electronic properties have been evaluated for the undoped and doped nanocrystalline films. X-ray photoelectron spectroscopy (XPS) measurements demonstrated the presence of the substitutional boron and phosphorous in the doped films. It was found that thermal annealing can efficiently activate the dopants in films accompanying with formation of nc-Si grains. Based on the temperature-dependent conductivity measurements, it was shown that the activation of dopant by annealing increased the room temperature dark conductivity from 3.4×10−4Scm−1 to 5.3Scm−1 for the P-doped films and from 1.28×10−3Scm−1 to 130Scm−1 for the B-doped films. Meanwhile, the corresponding value of conductivity activation energies was decreased from 0.29eV to 0.03eV for the P-doped films and from 0.3eV to 5.6×10−5eV for the B-doped films, which indicated the doped nc-Si films with high conductivity can be achieved with the present approach.

Measurement of Electron-Density and Mobility in P-Doped A-Si-H and Mc-Si-H Films

Characteristics of I(A-Si-H)/N+(Mc-Si-H) Junctions and Electron-Transport in P-Doped Mc-Si-H Films

Study on solid-phase crystallization of B-doped a-Si:H film

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

Study on the Resistivity and TCR of P-doped A-Si∶h Thin Films

Study of Structure and Temperature-Dependent Conductivity in N-Type Nc-Si:H Thin Films

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

Investigation of Microstructure and Photoelectric Properties of Boron- Doped Amorphous Silicon Films

High-conductive Nanocrystalline Silicon with Phosphorous and Boron Doping

Comparison on Mechanical Properties of Heavily Phosphorus- and Arsenic-Doped Czochralski Silicon Wafers

Formation of High Conductive Nano-Crystalline Silicon Embedded in Amorphous Silicon-Carbide Films with Large Optical Band Gap

Highly Conductive p-Type Silicon Carbon Alloys Deposited by Hot-Wire Chemical Vapor Deposition

Study of Interface State Density and Effective Oxide Charge in Post-Metallization Annealed SiO/sub 2/-Sic Structures

The Change Of Electronic Transport Behaviors By P And B Doping In Nano-Crystalline Silicon Films With Very High Conductivities

Conductive Behavior of Al/a-Si∶H Bilayer Thin Films

Effect of Phosphorus Doping on the Structural Properties in Nc-Si:H Thin Films

Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO 2 Multilayers

The Carrier Transport Properties of B-Doped Si Nanocrystal Films with Various Doping Concentrations

The Effect of Crystallization on Doping Efficiency in A-Si-H Films

Electronic transport properties in a-Si : H, mu c-Si : H and mu c-SiGe : H films studied by traveling wave method

Study on the Optical Property of P-C Doped A-Si:H Thin Films