Abstract:Using positive muons as local probes implanted at low energy enables gathering information about the material of interest with nanometer depth resolution (low energy muon spin rotation spectroscopy (LE-$\mu$SR). In this work, we leverage the capabilities of LE-$\mu$SR to perform an investigation of the SiO$_\text{2}$-SiC interface. Thermally oxidized samples are investigated before and after annealing in nitric oxide (NO) and argon (Ar) ambience. Thermal oxidation is found to result in structural changes both in the SiC crystal close to the interface and at the interface itself. Annealing in NO environment is known to passivate the defects leading to a reduction of the density of interface traps (D$_{it}$); LE-$\mu$SR further reveals that the NO annealing results in a thin layer of high carrier concentration in SiC, extending to more than 50 nm depending on the annealing conditions. We also see indications of Si vacancy (V$_{Si}$) formation in SiC after thermal oxidation. Following NO annealing, nitrogen occupies the V$_{Si}$ sites, leading to the reduction in D$_{it}$ and at the same time, creating a charge-carrier-rich region near the interface. By comparing the LE-$\mu$SR data from a sample with known doping density, we perform a high-resolution quantification of the free carrier concentration near the interface after NO annealing and discuss the origin of observed near-surface variations. Finally, the depletion of carriers in a MOS capacitor in the region below the interface is shown using LE-$\mu$SR. The NO annealed sample shows the narrowest depletion region, likely due to the reduced D$_{it}$ and charge-carrier-rich region near the interface. Our findings demonstrate the many benefits of utilizing LE-$\mu$SR to study critical regions of semiconductor devices that have been inaccessible with other techniques while retaining nanoscale depth resolution and a non-destructive approach.

Study of Interface State Density and Effective Oxide Charge in Post-Metallization Annealed SiO/sub 2/-Sic Structures

Effect of Post-Metal Annealing on the Quality of Thermally Grown Silicon Dioxide on 6H- and 4H-Sic

Measurement of Electron-Density and Mobility in P-Doped A-Si-H and Mc-Si-H Films

Effect of Pma on Effective Fixed Charge in Thermally Grown Oxide on 6H-Sic

Comparison of Microstructure and Electrical Characteristics of Sputtering-Derived HfGdO/HfTiO and HfTiO/HfGdO Gate Stacks

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Studies of defect states in the interface between SiO2 and a-Si:H films

The Correlation Between the Reduction of Interface State Density at the SiO2/SiC Interface and the NO Post-Oxide-Annealing Conditions

Annealing Influence on Stoichiometry and Band Alignment of 4H-SiC/SiO2 Interface Evaluated by X-ray Photoelectron Spectroscopy

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations

Investigation of Reducing Interface State Density in 4H-SiC by Increasing Oxidation Rate

Investigation of the SiO2-SiC interface using low energy muon spin rotation spectroscopy

Effects of SiO2 cap annealing on MOS interfaces formed on Mg-doped p-type GaN surface

Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO

Improving Interface Quality of 4H-Sic MOS Devices with High Temperature Oxidation Process in Mass Produce Furnace

Effect of Temperature-Dependent Low Oxygen Partial Pressure Annealing on SiC MOS

Effect of post-deposition annealing on charge distribution of metal-oxide-semiconductor capacitor with TiN/HfO2/SiO2/Si gate structure

The Effect on the Interface and Reliability of SiC MOS by Ar/O<sub>2</sub> Annealing

Interface Properties Study on SiC MOS with High-Κ Al2O3 Gate Dielectric

The Effect of Diluted N2O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor