Abstract:In this article, investigates the effects of high‐pressure annealing (HPA) and microwave annealing (MWA) on palladium germano‐silicide formation in Si0.8Ge0.2‐based complementary metal‐oxide semiconductor transistors. It highlights differences in sheet resistance, surface morphology, and Pd2Si phase formation, demonstrating that MWA reduces sheet resistance more effectively than HPA, which induces greater surface roughness in the films. In this study, forming palladium germano‐silicide on Si0.8Ge0.2‐based complementary metal‐oxide semiconductor (CMOS) transistors by high‐pressure annealing compared to microwave annealing is investigated. Boron‐doped Si0.8Ge0.2 layers are epitaxially grown on n‐type Si wafers, achieving an initial boron concentration of 5 × 1015 cm−3, which increase to ≈6 × 1020 cm−3 after microwave annealing, reducing sheet resistance. Palladium is deposited using electron beam evaporation to form a 15 nm layer on Si0.8Ge0.2 (200 nm)/Si (100) substrates. High‐pressure annealing is conducted from 300 to 500 °C in N2 ambiance at 5 kg cm−3, while microwave annealing is performed at 5.8 GHz and 1800–3000 W for 100 s. X‐ray diffractometer confirms high‐intensity Pd2Si phase formation, but scanning electron microscope and atomic force microscope reveal increased surface roughness and clustering after annealing. Sheet resistance increases from 10.35 Ω sq−1 (unannealed) to 131.8 Ω sq−1 (high‐pressure annealing at 300 °C) and 85.8 Ω sq−1 (microwave annealing at 1800 W). In these results, the trade‐offs between annealing methods and metal choices for achieving low contact resistance and Schottky barrier heights in p‐type Si0.8Ge0.2 CMOS circuits are highlighted.

Effect of Post-Metal Annealing on the Quality of Thermally Grown Silicon Dioxide on 6H- and 4H-Sic

Effect of Pma on Effective Fixed Charge in Thermally Grown Oxide on 6H-Sic

Study of Interface State Density and Effective Oxide Charge in Post-Metallization Annealed SiO/sub 2/-Sic Structures

Optimization of Microstructure to Improve Si3n4 Ceramics with Thermal Conductivity and Mechanical Properties: Effect of Si and Α-Si3n4 Powder Composition

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Effect of high temperature annealing (T > 1650°C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

Annealing Influence on Stoichiometry and Band Alignment of 4H-SiC/SiO2 Interface Evaluated by X-ray Photoelectron Spectroscopy

Effects of Post-Annealing Treatment on the Structural and Optical Properties of Cubic Mg Chi Zn1-Chi O Thin Films Grown on Sapphire

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Effect of annealing treatments on microstructure and mechanical properties of liquid-phase-sintered silicon carbide

Effect of Heat Treatment on Carbon in Multicrystalline Silicon

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers

Effect of High Pressure Annealing on Electrical Properties of Nitrogen and Germanium Doped Silicon

Exploration of High‐Pressure Annealing and Microwave Annealing in Palladium Germano‐Silicide Formation for Si0.8Ge0.2‐Based Complementary Metal‐Oxide–Semiconductor Transistors

The Effect of Post-Growth Rapid Thermal Annealing on InAs/InGaAs Dot-in-a-well Structure Monolithically Grown on Si

Effects of SiO2 cap annealing on MOS interfaces formed on Mg-doped p-type GaN surface

Effect of post-deposition annealing on electrical properties and structures of aluminum oxide passivation film on a crystalline silicon substrate

Effect of Temperature-Dependent Low Oxygen Partial Pressure Annealing on SiC MOS

Annealing Effect on Optical and Electronic Properties of Silicon Rich Amorphous Silicon-Carbide Films

The Ohmic Contact of 4H-Sic Power Devices by Pulse Laser Annealing and Rapid Thermal Annealing