Abstract:This article reports some new experimental evidence for the effect of carbon on oxygen precipitation in a high carbon content Czochralski silicon (H[C] Cz-Si) crystal. The oxygen precipitation occurring at an intermediate temperature of 950 °C has been especially investigated. In such case, the carbon atoms slightly participate in oxygen precipitation with 1200 °C preannealing, while the carbon atoms actively participate in oxygen precipitation with low temperature preannealing. The experiments show that the 1230 cm−1 absorption band in the Fourier transmission infrared spectrum definitely originates from the oxygen precipitates involving insignificant carbon reduction; on the other hand, the oxygen precipitates involving significant carbon reduction are surely irrelevant to the 1230 cm−1 absorption band. According to the correlation of the change in oxygen and carbon concentrations during oxygen precipitation, it is plausible that there is a critical precipitate size which distinguishes the carbon behavior in oxygen precipitation, that is, the carbon atoms actively participate in oxygen precipitation when the precipitates are smaller than the critical size; whereas, the carbon atoms are only slightly involved in oxygen precipitation when the precipitates are larger than the critical size.

Effect of Heat Treatment on Carbon in Multicrystalline Silicon

Oxygen Annealing Behavior in Multicrystalline Silicon

Effect of carbon on oxygen precipitation in Czochralski silicon for solar cells

The Effects of Extended Heat Treatment on Ni Induced Lateral Crystallization of Amorphous Silicon Thin Films

The Annealing Behavior of Oxygen in Cast Multicrystalline Silicon

Oxygen and Carbon Precipitation in Multicrystalline Solar Silicon

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Density functional theory study on a 1.4 nm silicon nanocrystal coated with carbon

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Effect of heat treatment on the optical and electrical properties of nitrogen-doped silicon samples

EFFECT OF VARIABLE TEMPERATURE PHOSPHOROUS GETTERING TREATMENTS ON THE PERFORMANCE OF MULTICRYSTALLINE SILICON

Heat treatment behavior of nitrogen impurity in N-doped silicon monocrystal

Oxygen Precipitation in Czochralski Silicon: Effect of Ramped Anneal from 300To750°c

Scanning Infrared Microscopy Investigation of Copper Precipitation in Cast Multicrystalline Silicon

Enhancement of Oxygen Precipitation in Czochralski Silicon Wafers by High-Temperature Anneals

The Effect of Heat Treatments on the Microstructural Evolution of Twin-Roll-Cast Al-Fe-Si Alloys

Thermal History Effect on the Nucleation of Oxygen Precipitates in Germanium Doped Cz-silicon Studied by High-Energy X-ray Diffraction

Evidence for the effect of carbon on oxygen precipitation in Czochralski silicon crystal

Oxygen precipitation in N-doped silicon monocrystal

Effects of Composition and Thermal Annealing on the Mechanical Properties of Silicon Oxycarbide Films

Effect of annealing treatments on microstructure and mechanical properties of liquid-phase-sintered silicon carbide