Abstract:In this study, synchrotron-based x-ray absorption microspectroscopy (μ-XAS) is applied to identify the chemical states of copper-rich clusters within a variety of silicon materials, including as-grown cast multicrystalline silicon solar cell material with high oxygen concentration and other silicon materials with varying degrees of oxygen concentration and copper contamination pathways. In all samples, copper silicide (Cu3Si) is the only phase of copper identified. It is noted from thermodynamic considerations that unlike certain metal species, copper tends to form a silicide and not an oxidized compound because of the strong silicon–oxygen bonding energy; consequently the likelihood of encountering an oxidized copper particle in silicon is small, in agreement with experimental data. In light of these results, the effectiveness of aluminum gettering for the removal of copper from bulk silicon is quantified via x-ray fluorescence microscopy, and a segregation coefficient is determined from experimental data to be at least (1–2)×103. Additionally, μ-XAS data directly demonstrate that the segregation mechanism of Cu in Al is the higher solubility of Cu in the liquid phase. In light of these results, possible limitations for the complete removal of Cu from bulk mc-Si are discussed.

Scanning Infrared Microscopy Investigation of Copper Precipitation in Cast Multicrystalline Silicon

Effect of Intrinsic Point Defects on Copper Precipitation in Large-Diameter Czochralski Silicon

Iron Precipitation in Crystalline Silicon

Precipitation and gettering behaviors of copper in multicrystalline silicon used for solar cells

Copper Precipitates in Multicrystalline Silicon for Solar Cells

Investigation of Copper Precipitation in Denuded Zone in Czochralski Silicon

Influence of Nickel Precipitation on the Formation of Denuded Zone in Czochralski Silicon

Recombination behavior of nickel in cast multicrystalline silicon

Nickel precipitation in large-diameter Czochralski silicon

Scanning Infrared Microscopy Study of Thermal Processing Induced Defects in Low Resistivity Si Wafers

Influence of Copper Precipitation on Oxygen Precipitation in Czochralski Silicon

Effect of Copper Precipitation on the Formation of Denuded Zone in Czchralski Silicon

The Annealing Behavior of Oxygen in Cast Multicrystalline Silicon

Oxygen Annealing Behavior in Multicrystalline Silicon

Correlation Between Oxygen Precipitation and Extended Defects in Czochralski Silicon: Investigation by Means of Scanning Infrared Microscopy

The characterization of high quality multicrystalline silicon by the electron beam induced current method

Analysis of copper-rich precipitates in silicon: Chemical state, gettering, and impact on multicrystalline silicon solar cell material

Effect of Cooling Rate during Thermal Processes on the Electrical Properties of Cast Multi-Crystalline Silicon

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Effect of Heat Treatment on Carbon in Multicrystalline Silicon

Copper Precipitation in Nitrogen-Doped Czochralski Silicon