Abstract:Based on the embedded atom method (EAM) and molecular dynamics (MD) method, the mono-crystalline copper with different defects is investigated through tension and nanoindentation simulation. The single-crystal copper nanowire with surface defects is firstly studied through tension. For validation, the tension simulations for nanowire without defect are carried out under different temperatures and strain rates. The defects on nanowires are then systematically studied in considering different defects orientation distribution. It is found that the Young’s modulus is insensitive of surface defects and centro-plane defects. However, the yield strength and yield point show a significant decrease due to the different defects. Specially, the 〖45〗^° defect in surface and in (200) plane exerts the biggest influence to the yield strength, about 34.20% and 51.45% decrease are observed, respectively. Different defects are observed to serve as a dislocation source and different necking positions of the nanowires during tension are found. During nanoindentation simulation, dislocation is found nucleating below the contact area, but no obvious dislocation is generated around the nano-cavity. Comparing with the perfect substrate during nanoindentation, the substrate with nano-cavities emerged less dislocations, it is supposed that the nano-cavity absorbed part of the indent energy, and less plastic deformation happened in the defected substrate.

Effect of Intrinsic Point Defects on Copper Precipitation in Large-Diameter Czochralski Silicon

Scanning Infrared Microscopy Investigation of Copper Precipitation in Cast Multicrystalline Silicon

Advanced Numerical Characterization of Mono-Crystalline Copper with Defects

Correlation Between Oxygen Precipitation and Extended Defects in Czochralski Silicon: Investigation by Means of Scanning Infrared Microscopy

Influence of Copper Precipitation on Oxygen Precipitation in Czochralski Silicon

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Influence of Nickel Precipitation on the Formation of Denuded Zone in Czochralski Silicon

Effect of Silicon Interstitials on Cu Precipitation in N-Type Czochralski Silicon

Effect of Point Defects on the Recombination Activity of Copper Precipitates in P-Type Czochralski Silicon

Copper Precipitation in Nitrogen-Doped Czochralski Silicon

Correlation Between Copper Precipitation and Grown-In Oxygen Precipitates in 300~mm Czochralski Silicon Wafer

Evolution of secondary defects in arsenic implanted Si

Effect of Tin on Point Defects and Oxygen Precipitation in Czochralski Silicon: Experimental and Theoretical Studies

Effect Of Point Defects On Copper-Related Deep Levels In P-Type Czochralski Silicon

Grown-In Defects in Heavily Boron-Doped Czochralski Silicon

Nickel precipitation in large-diameter Czochralski silicon

Effect of Vacancies on Copper Precipitation in N‐type Czochralski Silicon

Effect of oxygen precipitates on dislocation motion in Czochralski silicon

Scanning Infrared Microscopy Study of Thermal Processing Induced Defects in Low Resistivity Si Wafers

Internal Gettering of Copper Contamination in Czochralski Silicon