Abstract:Through comparative investigation on the growth of oxidation-induced stacking faults (OSFs) in heavily antimony (Sb)-doped and phosphorus (P)-doped Czochralski (Cz) silicon wafers with almost the same resistivity, effects of dopants on the growth of OSF in heavily doped n-type Cz silicon are studied experimentally. Moreover, the influences of Sb and P atoms on the recombination of self-interstitials and vacancies are also explored on the basis of the first-principles calculations. It is shown experimentally that all the OSF lengths are almost identical regardless of the type and density of OSF nucleation centers, such as copper precipitates and mechanical scratches etc.. However, it is found that the OSF length of heavily Sb-doped Cz silicon wafer is larger than that of heavily P-doped Cz silicon wafer under the same oxidation condition. Essentially, the OSFs are formed by the aggregation of silicon self-interstitials released at the Si/SiO 2 interface during the oxidation. Therefore, a longer OSF implies that a higher quantity of silicon self-interstitials remains after the recombination of vacancies and silicon self-interstitials in the heavily Sb-doped Cz silicon wafer. The first-principles calculations based on density functional theory (DFT) indicate that Sb atoms combine with vacancies more readily than P atoms. This is actually due to the fact that Sb has a much larger atomic size than P. In other words, as compared with P atoms, the Sb atoms are the more efficient vacancy-trapping centers, thus retarding the recombination of vacancies and silicon self-interstitials. Consequently, the silicon self-interstitials remain after recombination with the vacancies that are much more in heavily Sb-doped Cz silicon wafer than in heavily P-doped counterpart when undergoing the same oxidation. In turn, the OSFs in heavily Sb-doped silicon wafers are relatively longer.

Effect of Silicon Interstitials on Cu Precipitation in N-Type Czochralski Silicon

Effect of Vacancies on Copper Precipitation in N‐type Czochralski Silicon

Copper Precipitation in Nitrogen-Doped Czochralski Silicon

Effect of Intrinsic Point Defects on Copper Precipitation in Large-Diameter Czochralski Silicon

Influence of Copper Precipitation on Oxygen Precipitation in Czochralski Silicon

Effect of oxygen precipitates on dislocation motion in Czochralski silicon

Influence of Nickel Precipitation on the Formation of Denuded Zone in Czochralski Silicon

Scanning Infrared Microscopy Investigation of Copper Precipitation in Cast Multicrystalline Silicon

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Thermal History Effect on the Nucleation of Oxygen Precipitates in Germanium Doped Cz-silicon Studied by High-Energy X-ray Diffraction

Oxygen Precipitate Nucleation in Heavily Antimony-Doped Czochralski Silicon

Oxide Precipitate Nucleation at 300 °C in Low Resistivity N-Type Czochralski Si

Effects of dopants on the growth of oxidation-induced stacking faults in heavily doped n-type Czochralski silicon

Effect of Rapid Thermal Processing on Oxygen Precipitation in Czochralski Silicon Subjected to Simulating CMOS Thermal Processing

Oxygen Precipitation of Nitrogen-Doped Czochralski Silicon Subjected to Multi-Step Thermal Process

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Effect of Point Defects on the Recombination Activity of Copper Precipitates in P-Type Czochralski Silicon

Influences of Oxygen Precipitation on Vickers Hardness of Czochralski Silicon

Growth of CuO Nanowires on Si Substrate by Thermal Oxidation Method and Its Interfacial Delamination Mechanism.

The Effect of the Ramping Rate on Oxygen Precipitation and the Denuded Zone in Heavily Doped Czochralski Silicon

Correlation Between Oxygen Precipitation and Extended Defects in Czochralski Silicon: Investigation by Means of Scanning Infrared Microscopy