Effect Of Point Defects On Copper-Related Deep Levels In P-Type Czochralski Silicon
weiyan wang,deren yang,xuegong yu,xiangyang ma,duanlin que
DOI: https://doi.org/10.1063/1.2786126
IF: 2.877
2007-01-01
Journal of Applied Physics
Abstract:The effect of point defects on the copper (Cu)-related deep levels in p-type Czochralski (Cz) silicon has been investigated. It was found that generally five deep levels E-v+0.14 eV, E-v+0.17 eV, E-v+0.32 eV, E-v+0.35 eV, and E-v+0.46 eV were related to Cu in the p-type Cz silicon. Among them, the newly found levels E-v+0.35 eV and E-v+0.32 eV can be influenced by the point defects introduced during rapid thermal process. The intensity of level E-v+0.35 eV increased with the introduced vacancies, while that of level E-v+0.32 eV was dependent on the silicon interstitials. Moreover, the electronic states of those two levels were ascribed to be localized states. Based on the experimental facts, it is believed that the origins of levels E-v+0.35 eV and E-v+0.32 eV are the complex of Cu and vacancy and that of Cu and silicon interstitials, respectively. (C) 2007 American Institute of Physics.