Abstract:Rapid thermal annealing of arsenic and boron difluoride implants, such as those used for source/drain regions in CMOS, has been carried out using a scanning electron beam annealer, as part of a study of transient diffusion effects. Three types of e-beam anneal have been performed, with peak temperatures in the range 900–1200°C; the normal isothermal e-beam anneals, together with sub-second fast anneals and ‘dual-pulse’ anneals, in which the sample undergoes an isothermal pre-anneal followed by rapid heating to the required anneal temperature in less than 0.5s. The diffusion occuring during these anneal cycles has been modelled using SPS-1D, an implant and diffusion modelling program developed by one of the authors. This has been modified to incorporate simulated temperature vs. time cycles for the anneals. Results are presented applying the usual equilibrium clustering model, a transient point-defect enhancement to the diffusivity proposed recently by Fair and a new dynamic clustering model for arsenic. Good agreement with SIMS measurements is obtained using the dynamic clustering model, without recourse to a transient defect model. Defects remaining in diodes fabricated with the forementioned implants after these anneal cycles have been studied using DLTS techniques. Trap densities for the three types of e-beam anneal are comparable to those for furnace annealed diodes, as are the reverse leakage currents measured (typically 2–5nA for a 0.85mm2 diode at −5V).

Scanning Infrared Microscopy Study of Thermal Processing Induced Defects in Low Resistivity Si Wafers

Scanning Infrared Microscopy Investigation of Copper Precipitation in Cast Multicrystalline Silicon

Sample Thickness Effect Of Thermal Vibration Correction Within X-Ray Dynamical Theory For Germanium-Doped Silicon

Correlation Between Oxygen Precipitation and Extended Defects in Czochralski Silicon: Investigation by Means of Scanning Infrared Microscopy

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by Γirradiation and High Temperature-High Pressure Treatment

Progress in Study of Oxygen-Related Defects in Electron Irradiated CZ-Si

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Evolution of secondary defects in arsenic implanted Si

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

In Situ Defect Quantification and Phase Identification During Flash Sintering Using Raman Spectroscopy

Effects of Annealing Atmosphere on Bulk Micro-Defects in Czochralski Silicon Wafer

A Study of Electron Irradiation-Induced Defects in Si Layers

Effect of Intrinsic Point Defects on Copper Precipitation in Large-Diameter Czochralski Silicon

Thermal Fields Simulation of the Refining Process for Si Wafer by Continuous-Wave Laser Irradiation

Sensitive and Accurate Measurement of Interstitial Oxygen and Substitutional Carbon in Single Crystalline Silicon by Multiple Transmission-Reflection Infrared Spectroscopy (MTR-IR)

Effect of Temperature on the Anisotropic Distribution of Defects in Self-Ion Irradiated Α-Sic: In-situ TEM Investigation

Dissolution at High Temperature and Re-Growth of Oxygen Precipitation in Czochralski Silicon Wafer

Rapid Thermal Processing and the Control of Oxygen Precipitation Behaviour in Silicon Wafers

Structure Studies of Microcrystalline Silicon Thin Film Using Raman Scattering and Photo Thermal Deflection Spectra

Impact of Rapid Thermal Processing on Oxygen Precipitation in Heavily Arsenic and Antimony Doped Czochralski Silicon