Abstract:Irradiation damage is a key issue for the reliability of semiconductor devices under extreme environments. For decades, the ionizing-irradiation-induced damage in transistors with silica-silicon (SiO2 -Si) structures at room temperature has been modeled by a uniform generation of <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> centers in the bulk silica region through the capture of irradiation-induced holes, and an irreversible conversion from <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> to Pb centers at the SiO2 /Si interface through reactions with hydrogen molecules (H2 ). However, the traditional model fails to explain experimentally-observed dose dependence of the defect concentrations, especially at low dose rate. Here, it is proposed that the generation of <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> centers is decelerated because the holes migrate dispersively in disordered silica and the diffusion coefficient decays as the irradiation goes on. It is also proposed that the conversion between <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> and Pb centers is reversible because the huge activation energy of the reverse reaction can be reduced by a "phonon-kick" effect of the vibrational energy of H2 and Pb centers transferred from nearby nonradiative recombination centers. Experimental studies are carried out to demonstrate that the derived analytic model based on these two new concepts can consistently explain the fundamental but puzzling dose dependence of the defect concentrations for an extremely wide dose rate range.

A Study of Electron Irradiation-Induced Defects in Si Layers

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Evolution of secondary defects in arsenic implanted Si

Structural and Luminescent Properties of Electron-Irradiated Silicon

Scanning Infrared Microscopy Study of Thermal Processing Induced Defects in Low Resistivity Si Wafers

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

General Model for Defect Dynamics in Ionizing-Irradiated SiO<sub>2</sub>-Si Structures

General Model for Defect Dynamics in Ionizing‐Irradiated SiO <sub>2</sub> ‐Si Structures

Electron Irradiation Effects and Room-Temperature Annealing Mechanisms for SiC MOSFETs

Electronic properties of ionizing radiation-induced defects at SiO /Si interface associated with non-trivial excess current splitting

Influence of Electric Field on the Formation of Neutron, Electron and γ -Ray Radiation Defects in Silicon

General Model for Defect Dynamics in Ionizing‐Irradiated SiO 2 ‐Si Structures

Low Energy Electron Irradiation Induced Deep Level Defects In 6h-Sic: The Implication For The Microstructure Of The Deep Levels E-1/E-2

Progress in Study of Oxygen-Related Defects in Electron Irradiated CZ-Si

Electron irradiation-induced defects in lithium doped n-type silicon with different oxygen concentrations

In-growth of an Electrically Active Defect in High-Purity Silicon after Proton Irradiation

Hole Capture-Structural Relaxation Mechanism of Defect Generation in Ionizing-irradiated $a$-SiO$_2$

Defect Characterization of 6H-Sic Studied by Slow Positron Beam

Irradiation-Induced Defects In Ge Studied By Transient Spectroscopies

Investigation of EL2 defect in 10MeV electron irradiated undoped semi-insulating LEC GaAs