Abstract:Irradiation damage is a key issue for the reliability of semiconductor devices under extreme environments. For decades, the ionizing-irradiation-induced damage in transistors with silica-silicon (SiO2 -Si) structures at room temperature has been modeled by a uniform generation of <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> centers in the bulk silica region through the capture of irradiation-induced holes, and an irreversible conversion from <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> to Pb centers at the SiO2 /Si interface through reactions with hydrogen molecules (H2 ). However, the traditional model fails to explain experimentally-observed dose dependence of the defect concentrations, especially at low dose rate. Here, it is proposed that the generation of <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> centers is decelerated because the holes migrate dispersively in disordered silica and the diffusion coefficient decays as the irradiation goes on. It is also proposed that the conversion between <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> and Pb centers is reversible because the huge activation energy of the reverse reaction can be reduced by a "phonon-kick" effect of the vibrational energy of H2 and Pb centers transferred from nearby nonradiative recombination centers. Experimental studies are carried out to demonstrate that the derived analytic model based on these two new concepts can consistently explain the fundamental but puzzling dose dependence of the defect concentrations for an extremely wide dose rate range.

Electronic properties of ionizing radiation-induced defects at SiO /Si interface associated with non-trivial excess current splitting

The Influence of Deep-Level Defects With Various Depths in SiO<sub>2</sub> on Ionizing Damage

Radiation Effect on the Electron Transport Properties of SiO2/Si Interface: Role of Si Dangling-Bond Defects and Oxygen Vacancy

Atomic and Electron Analyzing of Irradiation Damage in Si/SiO2 Interfaces Caused by Irradiation: First-principle Calculation

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

General Model for Defect Dynamics in Ionizing‐Irradiated SiO <sub>2</sub> ‐Si Structures

General Model for Defect Dynamics in Ionizing-Irradiated SiO<sub>2</sub>-Si Structures

Effect of Electric Field on Radiation Defects in NPN Transistors

General Model for Defect Dynamics in Ionizing‐Irradiated SiO 2 ‐Si Structures

Synergistic Effect of Ionization and Displacement Defects in Npn Transistors Induced by 40-Mev Si Ion Irradiation with Low Fluence

Evolution of secondary defects in arsenic implanted Si

Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

Hole Capture-Structural Relaxation Mechanism of Defect Generation in Ionizing-irradiated $a$-SiO$_2$

A Study of Electron Irradiation-Induced Defects in Si Layers

Observation and Origin of Anomalous Early Recovery of Base Currents in Low-Dose-Rate γ-Ray-Irradiated PNP Transistors

Radiation Damage and Defects in NPN Bipolar Junction Transistors Irradiated by Silicon Ions with Various Energies

The Effects of Displacement Damage on Ionization Effect in SiO2 Layer of Bipolar Transistor

Gamma-Ray Irradiation Induced Dielectric Loss of SiO 2 /Si Heterostructures in Through-Silicon Vias (TSVs) by Forming Border Traps

Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique

First-principles Study of Non-Radiative Carrier Capture by Defects at Amorphous-Sio2/si(100) Interface

Mechanisms and Models for the Suppressed Defect Dynamics in SiO2–Si Structures under High‐To‐Low Switched Dose Rate Irradiations