Abstract:In this paper, experiments on 208 MeV Ge ion irradiation with different source-drain bias voltages are carried out for the double-trench SiC metal–oxide–semiconductor field-effect transistors, and the physical mechanism of the single event effect is analyzed. The experimental results show that the drain leakage current of the device increases more obviously with the increase of the initial bias voltage during irradiation. When the bias voltage is 400 V during irradiation, the device has a single event burned at a fluence of 9×10 4 ion/cm 2 , and when the bias voltage is 500 V, the device has a single event burned at a fluence of 3×10 4 ion/cm 2 , so when the LET value is 37.3 MeV·cm 2 /mg, the SEB threshold of DUT does not exceed 400 V, which is lower than 34 % of the rated operational voltage. The post gate-characteristics test results show that the leakage current of the device with a bias voltage of 100 V does not change significantly during irradiation. When the bias voltage is 200 V, the gate leakage and the drain leakage of the device both increase, so do they when the bias voltage is 300 V, which is positively related to bias voltage. In order to further analyze the single particle effect mechanism of device, the simulation is conducted by using TCAD tool. The simulation results show that at low bias voltage, the heavy ion incident device generates electron-hole pairs, the electrons are quickly swept out, and the holes accumulate at the gate oxygen corner under the effect of the electric field, which combines the source-drain bias voltage, leading to the formation of leakage current channels in the gate oxygen layer. The simulation results also show that at high bias voltage, the electrons generated by the incident heavy ion move towards the junction of the N – drift layer and the N + substrate under the effect of the electric field, which further increases the electric field strength and causes significant impact ionization. The local high current density generated by the impact ionization and the load large electric field causes the lattice temperature to exceed the melting point of silicon carbide, causing single event burnout. This work provides a reference and support for studying the radiation effect mechanism and putting silicon carbide power devices into aerospace applications.

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Origin of Irradiation Synergistic Effects in Silicon Bipolar Transistors

The Effects of Gamma Irradiation on Neutron Displacement Sensitivity of Lateral PNP Bipolar Transistors

The Effects of $\gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology.

Displacement damage and total ionisation dose effects on 4H‐SiC power devices

Heavy ion single event effect in double-trench SiC metal–oxide–semiconductor field-effect transistors

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Electronic properties of ionizing radiation-induced defects at SiO /Si interface associated with non-trivial excess current splitting

Statistical Analysis on the Effects of Heavy Ion Irradiation on 65 Nm Bulk Silicon MOS Devices

Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor

Gate Oxide Damage of SiC MOSFETs Induced by Heavy-Ion Strike

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

Relating Gain Degradation to Defects Production in Neutron-Irradiated 4H-Sic Transistors

Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-Nm PDSOI I/O Nmosfets

Analysis of Gate Oxide Degradation Induced by Heavy Ion in SiC Power MOSFETs

Simulation of Synergistic Effects on Lateral Pnp Bipolar Transistors Induced by Neutron and Gamma Irradiation

Physical Model for Ionizing Radiation Damage in Partially Depleted SOI Transistors

Gamma-Ray Irradiation Induced Dielectric Loss of SiO 2 /Si Heterostructures in Through-Silicon Vias (TSVs) by Forming Border Traps

Mechanism of Synergistic Effects of Neutron- and Gamma-Ray-Radiated PNP Bipolar Transistors

A Special Total-Ionizing-Dose-Induced Short Channel Effect in Thin-Film PDSOI Technology: Phenomena, Analyses, and Models