Abstract:Irradiation damage is a key issue for the reliability of semiconductor devices under extreme environments. For decades, the ionizing-irradiation-induced damage in transistors with silica-silicon (SiO2 -Si) structures at room temperature has been modeled by a uniform generation of <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> centers in the bulk silica region through the capture of irradiation-induced holes, and an irreversible conversion from <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> to Pb centers at the SiO2 /Si interface through reactions with hydrogen molecules (H2 ). However, the traditional model fails to explain experimentally-observed dose dependence of the defect concentrations, especially at low dose rate. Here, it is proposed that the generation of <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> centers is decelerated because the holes migrate dispersively in disordered silica and the diffusion coefficient decays as the irradiation goes on. It is also proposed that the conversion between <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> and Pb centers is reversible because the huge activation energy of the reverse reaction can be reduced by a "phonon-kick" effect of the vibrational energy of H2 and Pb centers transferred from nearby nonradiative recombination centers. Experimental studies are carried out to demonstrate that the derived analytic model based on these two new concepts can consistently explain the fundamental but puzzling dose dependence of the defect concentrations for an extremely wide dose rate range.

The Influence of Deep-Level Defects With Various Depths in SiO<sub>2</sub> on Ionizing Damage

The Effects of Displacement Damage on Ionization Effect in SiO2 Layer of Bipolar Transistor

Effect of Electric Field on Radiation Defects in NPN Transistors

Synergistic Effect of Ionization and Displacement Defects in Npn Transistors Induced by 40-Mev Si Ion Irradiation with Low Fluence

Effect of Protons Located at Different Region in SiO2 Layer on GLPNP Transistors Degradation

General Model for Defect Dynamics in Ionizing‐Irradiated SiO <sub>2</sub> ‐Si Structures

Investigation of Heavy-Ions-Induced Leakage Current Modes and Degradation Mechanism in SiC MOSFETs under Complex Heavy Ion Conditions

Electronic properties of ionizing radiation-induced defects at SiO /Si interface associated with non-trivial excess current splitting

General Model for Defect Dynamics in Ionizing-Irradiated SiO<sub>2</sub>-Si Structures

General Model for Defect Dynamics in Ionizing‐Irradiated SiO 2 ‐Si Structures

A Technique for Characterizing Ionization and Displacement Defects in NPN Transistors Induced by 1-Mev Electron Irradiation

Radiation Damage and Defects in NPN Bipolar Junction Transistors Irradiated by Silicon Ions with Various Energies

Analysis of Displacement Damage Induced by Silicon-Ion Irradiation in SiC MOSFETs

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Atomic and Electron Analyzing of Irradiation Damage in Si/SiO2 Interfaces Caused by Irradiation: First-principle Calculation

Radiation Effect on the Electron Transport Properties of SiO2/Si Interface: Role of Si Dangling-Bond Defects and Oxygen Vacancy

Gate Oxide Damage of SiC MOSFETs Induced by Heavy-Ion Strike

A Multiscale Simulation on Aluminum Ion Implantation-Induced Defects in 4H-SiC MOSFETs

Research on the Combined Effects of Ionization and Displacement Defects in NPN Transistors Based on Deep Level Transient Spectroscopy

The Influence of Total Dose Irradiation and Annealing Experiments on Three Types of SiC Power Devices

Influence of Doubly-Hydrogenated Oxygen Vacancy on the TID Effect of MOS Devices