Abstract:SiC MOSFETs have gained widespread application and attention due to their superior performance, but their reliability is still a problem that must be solved in application. This work focuses on the characterization test and analysis of main electrical characteristics and defect changes of SiC VDMOS with three structures before and after total dose irradiation and annealing recovery experiment. The experimental results show that the electron-hole pairs generated by Co-60-gamma rays inside the devices generate interfacial state traps at the SiO2/Si interface of the gate oxygen layer, and the charge formed by the holes captured by these interfacial state traps at the SiO2/Si interface causes the threshold voltage of the devices negative drift. The double trench device is most affected by the total dose irradiation experiment, with the most significant changes in threshold voltage, saturation drain current, and number of defects, followed by the asymmetric trench device, and the least change in the planar gate device. The characteristics of the asymmetric trench and planar gate devices basically recovered after room-temperature and high-temperature annealing, while the double trench device was still severely degraded. Analysis is due to the immaturity of etching and oxidation processes in trench gate structure devices, which leads to the poorer radiation resistance of the SiO2/SiC interface at the gate oxide layer compared to the planar gate. While the asymmetric trench structure protects the trench gate oxide layer by forming a P+ region under the gate slot through ion injection, which can alleviate the problem of poor radiation resistance of the trench gate structure to some extent.

The Influence of Total Dose Irradiation and Annealing Experiments on Three Types of SiC Power Devices

The Degradation and Recovery of 1200-V SiC MOSFET with Different Total Ionizing Doses

Total ionizing dose effects of 60Co-γ ray radiation on SiC MOSFETs with different gate oxide thickness

Total Ionizing Effects on Static Characteristics of 1200V SiC MOSFET Power Devices with Planar and Trench Structures

Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different Structures

Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs

Comparison of Gamma Irradiation Effects on Short Circuit Characteristics of SiC MOSFET Power Devices Between Planar and Trench Structures

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Comparison of total ionizing dose effects in SiC MOSFETs with double trench versus asymmetric trench

Analysis of Gate Oxide Degradation Induced by Heavy Ion in SiC Power MOSFETs

Degradation Behavior of SiC Trench MOSFETs by Total-Ionizing-dose Irradiation under Gate Voltage Stress

The Effect of Diluted N2O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor

Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example

Investigation of total ionizing dose effects in 4H-SiC power MOSFET under gamma ray radiation

Heavy-ion effects in SiC power MOSFETs with trench-gate design

Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison between Planar-Gate and Trench-Gate Structures

Degradation of VDMOS Under Simultaneous and Sequential Stress of Gamma Ray Irradiation and Annealing Process

Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultra-High Doses

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

Investigation on Dynamic Characteristic Variations Caused by TID for SiC MOSFET Power Devices

Displacement damage and total ionisation dose effects on 4H‐SiC power devices