Abstract:The practical damage of silicon bipolar devices subjected to mixed ionization and displacement irradiations is usually evaluated by the sum of separated ionization and displacement damages. However, recent experiments show clear difference between the practical and summed damages, indicating significant irradiation synergistic effects (ISEs). Understanding the behaviors and mechanisms of ISEs is essential to predict the practical damages. In this work, we first make a brief review on the state of the art, critically emphasizing on the difficulty encountered in previous models to understand the dose rate dependence of the ISEs. We then introduce in detail our models explaining this basic phenomenon, which can be described as follows. Firstly, we show our experimental works on PNP and NPN transistors. A variable neutron fluence and $\gamma$-ray dose setup is adopted. Fluence-dependent `tick'-like and sublinear dose profiles are observed for PNP and NPN transistors, respectively. Secondly, we describe our theoretical investigations on the positive ISE in NPN transistors. We propose an atomistic model of transformation and annihilation of $\rm V_2$ displacement defects in p-type silicon under ionization irradiation, which is totally different from the traditional picture of Coulomb interaction of oxide trapped charges in silica on charge carriers in irradiated silicon. The predicted novel dose and fluence dependences are fully verified by the experimental data. Thirdly, the mechanism of the observed negative ISE in PNP transistors is investigated in a similar way as in the NPN transistor case. The difference is that in n-type silicon, VO displacement defects also undergo an ionization-induced transformation and annihilation process. Our results show that, the evolution of displacement defects due to carrier-enhanced defect diffusion and reaction is the dominating mechanism of the ISEs.

Observation and Origin of Anomalous Early Recovery of Base Currents in Low-Dose-Rate γ-Ray-Irradiated PNP Transistors

J un 2 01 9 Ultraslow Dynamic Annealing of Neutron-induced Defects in n-type Silicon

Radiation Effects on the Low Frequency Noise in Partially Depleted Silicon on Insulator Transistors

A Direct Evidence of the Annealing Effect of Ionization Damage on Displacement Damage in NPN Transistors

Origin of Irradiation Synergistic Effects in Silicon Bipolar Transistors

Investigation of the Surface Defects in N-Channel MOS Transistors Under Long-Term Low-Dose-Rate Irradiation

Analytical Model for Total Ionizing Dose-Induced Excess Base Current in PNP BJTs

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Electronic properties of ionizing radiation-induced defects at SiO /Si interface associated with non-trivial excess current splitting

Synergistic Effect of Ionization and Displacement Defects in Npn Transistors Induced by 40-Mev Si Ion Irradiation with Low Fluence

Mechanism of Synergistic Effects of Neutron- and Gamma-Ray-Radiated PNP Bipolar Transistors

Effect of Electric Field on Radiation Defects in NPN Transistors

Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor

A Technique for Characterizing Ionization and Displacement Defects in NPN Transistors Induced by 1-Mev Electron Irradiation

Study on Ionization Damage of Silicon-Germanium Heterojunction Bipolar Transistors at Various Dose Rates

Relating Gain Degradation to Defects Production in Neutron-Irradiated 4H-Sic Transistors

The Influence of Total Dose Irradiation and Annealing Experiments on Three Types of SiC Power Devices

Impact of Passivation Layers on Irradiation Response of PNP Transistors under Different Dose Rates

General Model for Defect Dynamics in Ionizing‐Irradiated SiO 2 ‐Si Structures

Separation of Interface Traps and Oxide Charge in Ionization Damaged Silicon Bipolar Transistors Based on Experimental Observation

The Effects of Gamma Irradiation on Neutron Displacement Sensitivity of Lateral PNP Bipolar Transistors