Abstract:The total dose radiation and annealing responses of the back transistor of Silicon-On-Insulator (SOI) pMOSFETs have been studied by comparing with those of the back transistor of SOI nMOSFETs fabricated on the same wafer. The transistors were irradiated by 60Co {\gamma}-rays with various doses, and the front transistors are biased in a Float-State and Off-State, respectively, during irradiation. The total dose radiation responses of the back transistors are characterized by their threshold voltage shifts. The results show that the total dose radiation response of the back transistor of SOI pMOSFETs, similar to that of SOI nMOSFETs, depends greatly on their bias conditions during irradiation. However, with the Float-State bias, rather than the Off-State bias, the back transistors of SOI pMOSFETs reveal a much higher sensitivity to total dose radiation, which is contrary to those of SOI nMOSFETs. In addition, it is also found that the total dose radiation effect of the back transistor of SOI pMOSFETs irradiated with Off-State bias, as well as that of the SOI nMOSFETs, exhibits an increasing trend as the channel length decreases. The annealing response of the back transistors after irradiation at room temperature without bias, characterized by their threshold voltage shifts, indicates that there is a relatively complex annealing mechanism associated with channel length and type, bias condition during irradiation. In particular, for all the transistors irradiated with Off-State bias, their back transistors show an abnormal annealing effect during early annealing. All the results have been discussed and analyzed in detail by the aid of simulation.

Research on Total Dose Effect of Double Polysilicon Self-Aligned NPN Transistors

radiation effects of the bipolar linear circuits and devices for high and low dose rate total dose irradiations

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

The Total-Dose-effects of Gamma and Proton Irradiations on High-Voltage Silicon–germanium Heterojunction Bipolar Transistors

Total ionizing dose effects of domestic SiGe HBTs under different dose rate

Study on Ionization Damage of Silicon-Germanium Heterojunction Bipolar Transistors at Various Dose Rates

Total Dose Effects with High Dose Rate in NMOS Transistors

The Effects of Gamma Irradiation on Neutron Displacement Sensitivity of Lateral PNP Bipolar Transistors

Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor

Influence of enhanced low dose rate sensitivity on single-event transient degradation in the LM158 bipolar operational amplifier

Degradation mechanisms of current gain in NPN transistors

Proton Irradiation Effects on Dual Delta-Doped AlGaAs/InGaAs/AlGaAs Pseudomorphic High-Electron-Mobility Transistors

Time-Dependent Hot Carrier Degradation in Polysilicon Emitter Bipolar Transistors Under High Current and Radiation Combined Stress

Total Ionizing Dose Effects Sensitivity of Unsalicided Polysilicon Resistors

Study of Total Ionizing Dose Radiation Effects on Enclosed Gate Transistors in A Commercial Cmos Technology

Total dose radiation and annealing responses of the back transistor of Silicon-On-Insulator pMOSFETs

Investigation of Unique Total Ionizing Dose Effects in 0.2 um Partially-Depleted Silicon-on-Insulator Technology

An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-Nm PDSOI I/O Nmosfets

Study of the Dose Rate Effect of 180 Nm Nmosfets

Study on Total Ionizing Dose Effect of Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistors at High and Low Dose Rates

Radiation Defects and Annealing Study on PNP Bipolar Junction Transistors Irradiated by 3-Mev Protons