Abstract:The synergistic effects of neutron and gamma ray radiated PNP transistors are systematically investigated as functions of the neutron fluence, gamma ray dose, and dose rate. We find that the damages show a `tick'-like dependence on the gamma ray dose after the samples are radiated by neutrons. Two negative synergistic effects are derived, both of which have similar magnitudes as the ionization damage (ID) itself. The first one depends linearly on the gamma ray dose, whose slope depends quadratically on the initial displacement damage (DD) and can be attributed to the healing of neutron-radiation-induced defects in silicon. The second one has an exponential decay with the gamma ray dose, whose amplitude shows a rather strong enhanced low-dose-rate sensitivity (ELDRS) effect and can be attributed to the passivation of neutron-induced defects near the silica/silicon interface by the gamma-ray-generated protons in silica, which can penetrate the silica/silicon interface to passivate the neutron-induced defects in silicon. The simulated results based on the proposed model match the experimental data very well, but differ from previous model, which does not assume annihilation or passivation of the displacement defects. The unraveled defect annealing mechanism is important because it implies that displacement damages can be repaired by gamma ray radiation or proton diffusion, which can have important device applications in the space or other extreme environments.

Total Dose Effect on Mismatch Performance of 0.18 Μm MOS Differential Pair Transistors

Total Dose Effects with High Dose Rate in NMOS Transistors

γ-Radiation Total Dose Effects of Different Sized MOS Devices

Study of Total Ionizing Dose Radiation Effects on Enclosed Gate Transistors in A Commercial Cmos Technology

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Comparison of the Total Dose Responses of Fully Depleted SOI Nmosfets with Different Geometries for the Worst Case Bias Conditions

Total Dose Γ-Ray Radiation Characteristics of P-channel MOSFET/FIPOS

Total Ionizing Dose Radiation Effects on MOS Transistors with Different Layouts

The Total Dose Radiation Characteristics of Short Channel CMOS/SIMOX Devices

Total-Ionizing-Dose Response of MoS2 Transistors with ZrO2 and h-BN Gate Dielectrics

X-Ray and Proton Radiation Effects on 40 Nm CMOS Physically Unclonable Function Devices

Study of the Dose Rate Effect of 180 Nm Nmosfets

Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses

The Total Dose Radiation Characteristics Of Short-Channel Cmos/Simox Devices

An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-Nm PDSOI I/O Nmosfets

Synergistic Effect of Neutron and Gamma Irradiation on Cmos Integrated Circuits

Mechanism of Synergistic Effects of Neutron- and Gamma-Ray-Radiated PNP Bipolar Transistors

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

Impact of Proton-Radiation-Induced Spacer Damage on the Dc Characteristics Degradation in Deep-Submicron Metal-Oxide-Semiconductor Field Effect Transistors

Research on Total Dose Effect of Double Polysilicon Self-Aligned NPN Transistors

Total ionizing dose effects of domestic SiGe HBTs under different dose rate