Abstract:With the rapid development of the aviation industry, an increasing number of metal oxide semiconductor field effect transistors (MOSFETs) are being used in aerospace equipment. The total ionizing dose (TID) test has been developed for silicon power devices to evaluate their space usage capabilities. To evaluate the TID tolerance of silicon carbide (SiC) devices, two 1200V SiC MOSFET power devices with planar and trench structures were aged gamma irradiation environment, and the degradation of static properties, such as the transfer characteristics, output characteristics, and breakdown voltage were analyzed. The comparison of TID effects was made between planar and trench MOSFETs under gate bias (i.e., $\mathrm{V}_{\text{gs}} = 18$ V and $\mathrm{V}_{\text{ds}} = 0$ V) and zero bias ( $\mathrm{V}_{\text{gs}} = 0$ V and $\mathrm{V}_{\text{ds}} = 18$ V) conditions. The experimental results show that: (1) The trench MOSFET was more sensitive to TID effects, due to its unique structure and thick gate oxide. (2) The severity of TID effect under gate bias was mainly caused by the electric field within the gate oxide, which exacerbated the TID effect as compared to zero bias. (3) The degradation mechanisms of TID effect with increasing dose is illustrated, and several radiation hardening methods are proposed, including thinning the gate oxide, improving the quality of the gate oxide, and using insulating dielectrics with a wider bandgap instead of SiO2. Therefore, this work will be helpful to the explanation and radiation hardening of 1200V SiC MOSFET power devices under TID effects.

Total Ionizing Dose Radiation Effects on MOS Transistors with Different Layouts

Study of Total Ionizing Dose Radiation Effects on Enclosed Gate Transistors in A Commercial Cmos Technology

Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation.

Total Dose Effects with High Dose Rate in NMOS Transistors

γ-Radiation Total Dose Effects of Different Sized MOS Devices

Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process

TID Response and Radiation-Enhanced Hot-Carrier Degradation in 65-Nm Nmosfets: Concerns on the Layout-Dependent Effects

Impact of TID on the Transient Ionizing Irradiation Response of CMOS Circuits

Total Ionizing Dose Effects in 30-V Split-Gate Trench VDMOS

Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

Total Ionizing Dose Effect and Radiation Hardness Analysis on Low-Leakage ESD Devices Fabricated on Double SOI Technology

Bias and Geometry Dependence of Total-Ionizing-dose Effects in SOI FinFETs

Total Ionizing Effects on Static Characteristics of 1200V SiC MOSFET Power Devices with Planar and Trench Structures

An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-Nm PDSOI I/O Nmosfets

Study on Total Ionizing Dose Effect of Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistors at High and Low Dose Rates

The Improvement on Total Ionizing Dose (tid) Effects of the Ultra-Deep Submicron Mosfet Featuring Delta Doping Profiles

Total Dose Effect on Mismatch Performance of 0.18 Μm MOS Differential Pair Transistors

3d Numerical Simulation Of A Z Gate Layout Mosfet For Radiation Tolerance

Modeling and Simulation-Based Layout Optimization for Tolerance to TID Effect on n-MOSFET

Impact of TID on Latch Up Induced by Pulsed Irradiation in CMOS Circuits

Total ionizing dose and single-event effect in vertical channel double-gate nMOSFETs