Abstract:The model of lateral β-Ga 2 O 3 metal–oxide–semiconductor field-effect transistor (MOSFET) was established using Sentaurus Technology Computer Aided Design software. The gate-to-drain distance of the device was 13.7 μ m, and the breakdown voltage was 1135 V. The single event effect simulation model caused by heavy ion irradiation was introduced, and the effects of heavy ions' incident position, angle, drain bias voltage, and linear energy transfer on the single event effect were studied. It is found that x = 7.7 μ m is the sensitive location of the single event effect at the gate corner near the drain side and the peak value of the transient current is 177 mA/mm. The effect of the terminal structure of the field plate on the transient effect of the single event effect of β-Ga 2 O 3 MOSFET is studied. It is also found that the sensitive position of the single event effect of the conventional structure, gate-field plate structure, and gate–source composite field plate structure is around x = 7.7 μ m when V DS = 10 V. The peak transient currents obtained are 177, 161, and 148 mA/mm. The single event effect pulse current of the three structures increases with an increase in the drain bias voltage, while the peak pulse current of the conventional structure is larger than that of the gate-field plate structure and the gate–source composite structure. The research shows that the terminal structure of the field plate is reliable means to reduce the single particle effect.

Total ionizing dose and single-event effect in vertical channel double-gate nMOSFETs

Total ionizing dose effects of novel vertical channel double-gate nMOSFETs

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Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Single Event Effects of Low-Voltage N-type and P-type Trench-gate MOSFET Devices

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-Nm PDSOI I/O Nmosfets

Comparison of total ionizing dose effects in SiC MOSFETs with double trench versus asymmetric trench

Heavy-ion induced gate damage and thermal destruction in double-trench SiC MOSFETs

Total ionizing dose effects of 60Co-γ ray radiation on SiC MOSFETs with different gate oxide thickness

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

Effects of Non-Fatal Electrostatic Discharge on the Threshold Voltage Degradation in Nano CMOS Devices

Total Ionizing Dose (TID) Effect and Single Event Effect (SEE) in Quasi-Soi Nmosfets

Influence of Halo Implantations on the Total Ionizing Dose Response of 28 nm pMOSFETs Irradiated to Ultra-High Doses

Analysis of single event effects by heavy ion irradiation of Ga2O3 metal–oxide–semiconductor field-effect transistors

Impact of Total Ionizing Dose on Radio Frequency Performance of 22 nm Fully Depleted Silicon-On-Insulator nMOSFETs

Heavy-ion-induced permanent damage in ultra-deep submicron fully depleted SOI devices

Total Ionizing Dose Effects on Nanosheet Gate-All-Around MOSFETs Built on Void Embedded Silicon on Insulator Substrate

Total Dose Γ-Ray Radiation Characteristics of P-channel MOSFET/FIPOS

Impact of the Displacement Damage in Channel and Source/Drain Regions on the Dc Characteristics Degradation in Deep-Submicron Mosfets after Heavy Ion Irradiation