Abstract:With the rapid development of the aviation industry, an increasing number of metal oxide semiconductor field effect transistors (MOSFETs) are being used in aerospace equipment. The total ionizing dose (TID) test has been developed for silicon power devices to evaluate their space usage capabilities. To evaluate the TID tolerance of silicon carbide (SiC) devices, two 1200V SiC MOSFET power devices with planar and trench structures were aged gamma irradiation environment, and the degradation of static properties, such as the transfer characteristics, output characteristics, and breakdown voltage were analyzed. The comparison of TID effects was made between planar and trench MOSFETs under gate bias (i.e., $\mathrm{V}_{\text{gs}} = 18$ V and $\mathrm{V}_{\text{ds}} = 0$ V) and zero bias ( $\mathrm{V}_{\text{gs}} = 0$ V and $\mathrm{V}_{\text{ds}} = 18$ V) conditions. The experimental results show that: (1) The trench MOSFET was more sensitive to TID effects, due to its unique structure and thick gate oxide. (2) The severity of TID effect under gate bias was mainly caused by the electric field within the gate oxide, which exacerbated the TID effect as compared to zero bias. (3) The degradation mechanisms of TID effect with increasing dose is illustrated, and several radiation hardening methods are proposed, including thinning the gate oxide, improving the quality of the gate oxide, and using insulating dielectrics with a wider bandgap instead of SiO2. Therefore, this work will be helpful to the explanation and radiation hardening of 1200V SiC MOSFET power devices under TID effects.

Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Characteristics and ultra-high total ionizing dose response of 22 nm fully depleted silicon-on-insulator

Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultra-High Doses

Influence of Halo Implantations on the Total Ionizing Dose Response of 28 nm pMOSFETs Irradiated to Ultra-High Doses

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

Study of the Dose Rate Effect of 180 Nm Nmosfets

Total Dose Γ-Ray Radiation Characteristics of P-channel MOSFET/FIPOS

Investigation on TID tolerance of 65nm bulk silicon nMOSFETs

Charge Buildup and Spatial Distribution of Interface Traps in 65 nm pMOSFETs Irradiated to Ultra-high Doses

The Effects of Threshold Voltage and Number of Fins per Transistor on the TID Response of GF 12LP Technology

X-Ray and Proton Radiation Effects on 40 Nm CMOS Physically Unclonable Function Devices

Total ionizing dose and single-event effect in vertical channel double-gate nMOSFETs

Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process

Comparison of total ionizing dose effects in SiC MOSFETs with double trench versus asymmetric trench

Total Ionizing Effects on Static Characteristics of 1200V SiC MOSFET Power Devices with Planar and Trench Structures

Single Event Effects of Low-Voltage N-type and P-type Trench-gate MOSFET Devices

Comparison of the Total Dose Responses of Fully Depleted SOI Nmosfets with Different Geometries for the Worst Case Bias Conditions

Impact of Total Ionizing Dose on Radio Frequency Performance of 22 nm Fully Depleted Silicon-On-Insulator nMOSFETs