Abstract:Rapid thermal annealing of arsenic and boron difluoride implants, such as those used for source/drain regions in CMOS, has been carried out using a scanning electron beam annealer, as part of a study of transient diffusion effects. Three types of e-beam anneal have been performed, with peak temperatures in the range 900–1200°C; the normal isothermal e-beam anneals, together with sub-second fast anneals and ‘dual-pulse’ anneals, in which the sample undergoes an isothermal pre-anneal followed by rapid heating to the required anneal temperature in less than 0.5s. The diffusion occuring during these anneal cycles has been modelled using SPS-1D, an implant and diffusion modelling program developed by one of the authors. This has been modified to incorporate simulated temperature vs. time cycles for the anneals. Results are presented applying the usual equilibrium clustering model, a transient point-defect enhancement to the diffusivity proposed recently by Fair and a new dynamic clustering model for arsenic. Good agreement with SIMS measurements is obtained using the dynamic clustering model, without recourse to a transient defect model. Defects remaining in diodes fabricated with the forementioned implants after these anneal cycles have been studied using DLTS techniques. Trap densities for the three types of e-beam anneal are comparable to those for furnace annealed diodes, as are the reverse leakage currents measured (typically 2–5nA for a 0.85mm2 diode at −5V).

Low Energy Electron Irradiation Induced Deep Level Defects In 6h-Sic: The Implication For The Microstructure Of The Deep Levels E-1/E-2

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Electron Energy Dependence on Inducing the Photoluminescence Lines of 6H-Sic by Electron Irradiation

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Photoluminescence of Electron-and Neutron-Irradiated n-Type 6H-SiC

A Study of Electron Irradiation-Induced Defects in Si Layers

The evolution of defects in n-type 4H-SiC Schottky barrier diode irradiated with swift heavy ion using the Deep Level Transient Spectroscopy

Primary Photoluminescence In As-Neutron (Electron) -Irradiated N-Type 6h-Sic

Investigation of EL2 defect in 10MeV electron irradiated undoped semi-insulating LEC GaAs

Structural and Luminescent Properties of Electron-Irradiated Silicon

Effects of Electronic Energy Deposition on Pre-Existing Defects in 6H–sic

Electrically Active Defects in Ni-Si Silicide Studied by Deep-Level Transient Spectroscopy

Comparing the effect between room temperature and low temperature heavy ion irradiation by deep level transient spectroscopy

Depth profiles of deep levels generated in the tail region of Al ion implantation into n-type 4H-SiC

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Study of Irradiation Induced Changes of Electrical and Functional Characteristics in Ge Doped Si Diodes

Evolution of secondary defects in arsenic implanted Si

Profiling the Deep Levels in Sige/Si Microstructure by Small-Pulse Deep Level Transient Spectroscopy

Electron irradiation-induced defects in lithium doped n-type silicon with different oxygen concentrations

Photoluminescence Study of Beryllium Implantation Induced Intrinsic Defects in 6H-Silicon Carbide

Characterization of deep-level defects in highly-doped silicon with asymmetric structure by transient capacitance spectroscopy