Abstract:The characterization of defects in semiconductor materials and devices is crucial for enhancing the performance and reliability of semiconductor products. This tutorial review focuses on Deep Level Transient Spectroscopy (DLTS) as the primary analytical tool, thoroughly discussing its distinct advantages in deep-level defect characterization. However, it is unable to reveal the concentration-depth distribution of deep-level defects, neglects the dependency of carrier emission rates on the electric field, and fails to accurately identify defect structures. To overcome these limitations, two enhanced DLTS techniques have been developed to extend the capabilities of DLTS. These enhancements include the utilization of graded fill pulse technology to accurately map defect distributions at various depths within devices, facilitating individual defect characterization across different layers of multilayered structures; the application of varying electric field strengths to samples to delve into the intricate physical mechanisms of defects during carrier emission processes; and the adjustment of the duration of electric pulse injection to monitor signal growth trends, deducing the microstructure of defects. The paper integrates research findings from a wide array of field experts, meticulously outlines a description of how to obtain the depth distribution of defect concentration in devices, furnishes quantitative criteria for both the Poole-Frenkel effect and phonon-assisted tunneling mechanisms of carrier emission, and provides specific examples for distinguishing between interface states/bulk defects and point defects/extended defects. This enhances both the theoretical and practical knowledge in this field. The advanced DLTS techniques outlined provide crucial guidance for defect characterization and performance optimization in semiconductor devices with new structures and materials.

Profiling the Deep Levels in Sige/Si Microstructure by Small-Pulse Deep Level Transient Spectroscopy

Profiling the Deep Trap Level in the Semiconductor Heterostructures by Small-Pulse Deep-Level Transient Spectroscopy

Space Distribution of Deep Levels in SiGe/Si Heterostructure

Characterization of deep-level defects in highly-doped silicon with asymmetric structure by transient capacitance spectroscopy

Deep Centers Investigations of P-HEMT Functional Materials of Ultra-High-speed Microstructures Grown by MBE

A novel high-resolution technique for the study of deep energy levels in semiconductors based on computerized Laplace-DLTS

Characterization Study of Deep-Level Defect Spatial Distribution, Emission Mechanisms, and Structural Identification

Detection of Defects at Homoepitaxial Interface by Deep-Level Transient Spectroscopy

Interfacial Defects In Si1-Xgex/Si Quantum-Wells Detected By Deep-Level Transient Spectroscopy

To define nonradiative defects in semiconductors: An accurate DLTS simulation based on first-principle

Analysis of Semi-Insulating Carbon-Doped GaN Layers Using Deep-Level Transient Spectroscopy

Study of the Deep Level in GaN-based Light Emitting Diode

Deep-level Transient Spectroscopy Study on Direct Silicon Bonded (1 1 0)/(1 0 0) Interfacial Grain Boundary

Deep-Level Transient Spectroscopy Study On Direct Silicon Bonded (110)/(100) Interfacial Grain Boundary

Theory of Concentration Profiling Technique for Semiconductors with Many Deep Levels

First-principles Identification of Deep Energy Levels of Sulfur Impurities in Silicon and Their Carrier Capture Cross Sections

Large Area and Depth-Profiling Dislocation Imaging and Strain Analysis in Si/Sige/Si Heterostructures

Carrier depth profile of Si/SiGe/Si n-p-n HBT structural materials characterized by electrochemical capacitance-voltage method

A new lock-in amplifier-based deep-level transient spectroscopy test and measurement system for solar cells

A Direct Method to Extract Transient Sub-Gap Density of State (DOS) Based on Dual Gate Pulse Spectroscopy

Deep centers inAlGaAs/GaAs GRIN-SCHSQW laser structures grown by MBE and MOCVD