Abstract:The characterization of defects in semiconductor materials and devices is crucial for enhancing the performance and reliability of semiconductor products. This tutorial review focuses on Deep Level Transient Spectroscopy (DLTS) as the primary analytical tool, thoroughly discussing its distinct advantages in deep-level defect characterization. However, it is unable to reveal the concentration-depth distribution of deep-level defects, neglects the dependency of carrier emission rates on the electric field, and fails to accurately identify defect structures. To overcome these limitations, two enhanced DLTS techniques have been developed to extend the capabilities of DLTS. These enhancements include the utilization of graded fill pulse technology to accurately map defect distributions at various depths within devices, facilitating individual defect characterization across different layers of multilayered structures; the application of varying electric field strengths to samples to delve into the intricate physical mechanisms of defects during carrier emission processes; and the adjustment of the duration of electric pulse injection to monitor signal growth trends, deducing the microstructure of defects. The paper integrates research findings from a wide array of field experts, meticulously outlines a description of how to obtain the depth distribution of defect concentration in devices, furnishes quantitative criteria for both the Poole-Frenkel effect and phonon-assisted tunneling mechanisms of carrier emission, and provides specific examples for distinguishing between interface states/bulk defects and point defects/extended defects. This enhances both the theoretical and practical knowledge in this field. The advanced DLTS techniques outlined provide crucial guidance for defect characterization and performance optimization in semiconductor devices with new structures and materials.

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To define nonradiative defects in semiconductors: An accurate DLTS simulation based on first-principle

Defect identification based on first-principles calculations for deep level transient spectroscopy

Characterization Study of Deep-Level Defect Spatial Distribution, Emission Mechanisms, and Structural Identification

Characterization of deep-level defects in highly-doped silicon with asymmetric structure by transient capacitance spectroscopy

Detection of Defects at Homoepitaxial Interface by Deep-Level Transient Spectroscopy

GHz AC to DC TDDB Modeling with Defect Accumulation Efficiency Model

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

DLTS Study of Defects in HgCdTe Heterostructure Photodiode

A novel high-resolution technique for the study of deep energy levels in semiconductors based on computerized Laplace-DLTS

Density of Defect States Retrieved from the Hysteretic Gate Transfer Characteristics of Monolayer MoS2 Field Effect Transistors

Theoretical Investigation of Charge Transfer Between Two Defects in a Wide-Bandgap Semiconductor

Single thermal scan digital system for deep level transient spectroscopy

Characterization of Fast Diffusing Charged Defects in Semiconductors

Low-temperature irradiation-induced defects in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-type germanium

A Technique for Characterizing Ionization and Displacement Defects in NPN Transistors Induced by 1-Mev Electron Irradiation

Atomic Defect Quantification by Lateral Force Microscopy

Low-Temperature Irradiation-Induced Defects in P-Type Germanium

Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

Analysis of Semi-Insulating Carbon-Doped GaN Layers Using Deep-Level Transient Spectroscopy

An extended computational approach for point-defect equilibria in semiconductor materials