Abstract:The characterization of defects in semiconductor materials and devices is crucial for enhancing the performance and reliability of semiconductor products. This tutorial review focuses on Deep Level Transient Spectroscopy (DLTS) as the primary analytical tool, thoroughly discussing its distinct advantages in deep-level defect characterization. However, it is unable to reveal the concentration-depth distribution of deep-level defects, neglects the dependency of carrier emission rates on the electric field, and fails to accurately identify defect structures. To overcome these limitations, two enhanced DLTS techniques have been developed to extend the capabilities of DLTS. These enhancements include the utilization of graded fill pulse technology to accurately map defect distributions at various depths within devices, facilitating individual defect characterization across different layers of multilayered structures; the application of varying electric field strengths to samples to delve into the intricate physical mechanisms of defects during carrier emission processes; and the adjustment of the duration of electric pulse injection to monitor signal growth trends, deducing the microstructure of defects. The paper integrates research findings from a wide array of field experts, meticulously outlines a description of how to obtain the depth distribution of defect concentration in devices, furnishes quantitative criteria for both the Poole-Frenkel effect and phonon-assisted tunneling mechanisms of carrier emission, and provides specific examples for distinguishing between interface states/bulk defects and point defects/extended defects. This enhances both the theoretical and practical knowledge in this field. The advanced DLTS techniques outlined provide crucial guidance for defect characterization and performance optimization in semiconductor devices with new structures and materials.

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Electro-Thermo-Mechanical Investigation On Multi-Level Interconnects In The Presence Of An Esd Pulse

Profiling the Deep Levels in Sige/Si Microstructure by Small-Pulse Deep Level Transient Spectroscopy

Methods of Determining the Concentration and Mobility in Layers of Space-Charge Regions

Profiling the Deep Trap Level in the Semiconductor Heterostructures by Small-Pulse Deep-Level Transient Spectroscopy

ECV profiling of ultra-shallow junction formed by plasma doping

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C-V Profiling of Ultra-Shallow Junctions Using a Buried Layer with Stepped Doping

Study of the Deep Levels in Hg1-Xcdxte by Using Mobility and Carrier Concentration

Field-enhanced Carrier-Generation Effect of Deep-Level Centers in Semiconductors

Precision assessment of carrier concentration in semiconductors with negative electron affinity

Recent Progress on the Scanning Tunneling Microscopy and Spectroscopy Study of Semiconductor Heterojunctions

Characterization Study of Deep-Level Defect Spatial Distribution, Emission Mechanisms, and Structural Identification

A novel high-resolution technique for the study of deep energy levels in semiconductors based on computerized Laplace-DLTS

Probing Deep Level Centers In Gan Epilayers With Variable-Frequency Capacitance-Voltage Characteristics Of Au/Gan Schottky Contacts

A New Charge-Pumping Measurement Technique for Lateral Profiling of Interface States and Oxide Charges in MOSFETs

A Concise Analytical Approach For Predicting The Voltage And Edge Peak Field Profiles Of The Planar Junction With A Single Floating Field Limiting Ring

Accurate Determination of Ultrathin Gate Oxide Thickness and Effective Polysilicon Doping of CMOS Devices

Chemical trends of deep levels in van der Waals semiconductors

Electrochemical Capacitance-Voltage Characterization of Plasma-Doped Ultra-Shallow Junctions