Methods of Determining the Concentration and Mobility in Layers of Space-Charge Regions

V. P. Karamyshev

DOI: https://doi.org/10.1134/s1063782623010050

IF: 0.66

2024-02-16

Semiconductors

Abstract:—To study and control the technological processes for manufacturing semiconductor devices, the capacitance–voltage and conductance–voltage characteristics of space-charge regions in thin semiconductor layers are measured. Direct determination of the distribution profiles of the concentration and mobility of charge carriers from the measured capacitance–voltage and conductance–voltage characteristics is an urgent task. The work proposes simple operational methods for processing the capacitance–voltage and conductance–voltage characteristics in space-charge regions in thin semiconductor layers in order to obtain profiles of the distribution of the concentration and mobility of charge carriers. In particular, the determination of the concentration profiles of semiconductor majority carriers, the mobility of semiconductor majority carriers on structures with a conducting substrate, and the mobility of semiconductor majority carriers on structures with an insulating substrate are considered. It is shown that methods for processing capacitance–voltage and conductance–voltage characteristics of semiconductor structures such as a Schottky diode, asymmetrical p–n -junctions, and metal—insulator—semiconductor (MIS) structures can be used for monitoring technological processes and for inspecting finished devices.

physics, condensed matter