Abstract:Charge carrier mobility is one of the important parameters to measure to compare the behavior of different organic transistors. A high carrier mobility is essential for the organic transistors to operate at a high frequency. Recently, there have been discussions on the mobility overestimation due to gate bias dependent Schottky contacts which lead to severe nonlinearities in the current voltage characteristics, i.e., the double-slope feature. In addition, an accurate evaluation of the carrier mobility from the transfer curves requires accurate parameters such as channel dimensions or dielectric capacitance. Many of the organic field-effect transistors (OFETs) reported in the literature employ unpatterned semiconductor active layers or gate/gate dielectrics where the effective channel dimensions significantly deviate from the values defined by the source drain electrodes due to the fringe effect. To reveal the importance of the fringe effect on the mobility evaluation, here we perform a systematic investigation of OFETs with vacuum-deposited active layers in relation to the fringe effect, followed by the same analysis of solution-processed OFETs with tunable crystal morphology. By continuously narrowing down the active layer toward the actual channel region defined by the source drain electrodes, we show that the carrier mobilities are 110% and 60% overestimated in the vacuum-deposited and solution-processed devices, respectively, even with ideal linearity in the transfer curves. Herein, we suggest a model to evaluate the degree of mobility overestimation in these two families of OFETs and provide the guidelines for the design of the device geometry and channel dimensions to minimize mobility overestimation induced by the fringe effect. In our solution-processed OFETs, we conclude that a large channel width to length ratio over 20 is essential to alleviate the fringe current outside the channel, while a channel ratio greater than 40 is needed for the OFETs with vacuum-deposited semiconductor layers.

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Overestimation of Carrier Mobility in Organic Thin Film Transistors Due to Unaccounted Fringe Currents

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The Effect of Electric Field on Carrier Mobility in Organic Semiconductors Based on Exponential Type Density of States and Genuine Transport Energy

Spectroscopic assessment of charge mobility in organic semiconductors

The influence of impurities on the charge carrier mobility of small molecule organic semiconductors

Precise Extraction of Charge Carrier Mobility for Organic Transistors

Significant Mobility Enhancement by Semicrystalline Polymers Additive for Crystallization and Charge Transport in Organic Field-effect Transistor

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Simultaneous Measurement of Carrier Density and Mobility of Organic Semiconductors Using Capacitance Techniques