Abstract:Organic electronics is the technology enabling truly flexible electronic devices. However, despite continuous improvements in the charge-carrier mobility, devices used for digital circuits based on organic field-effect transistors (OFETs) have still not achieved a commercial breakthrough. A substantial hurdle to the realization of effective digital circuitry is the proper control of the threshold voltage Vth. Previous approaches include doping or self-assembled monolayers to provide the threshold voltage control. However, while self-assembled monolayers-modified OFETs often do not show the level of reproducibility which is required in digital circuit engineering, direct doping of the channel material results in a poor on/off ratio leading to unfavorable power dissipation. Furthermore, direct doping of the channel material in organic semiconductors could cause the formation of trap states impeding the charge-carrier transport. Employing the concept of modulation-doped field-effect transistors (MODFETs), which is well established in inorganic electronics, the semiconductor-dopant interaction is significantly reduced, thereby solving the above-described problems. Here, we present the concept of an organic semiconductor MODFET which is composed of an organic-organic heterostructure between a highly doped wide-energy-gap material and an undoped narrow-energy-gap material. The effectiveness of charge transfer across the interface is controlled by the doping concentration and thickness of an undoped buffer layer. A complete picture of the energy landscape of this heterostructure is drawn using impedance spectroscopy and ultraviolet photoelectron spectroscopy. Furthermore, we analyze the effect of the dopant density on the charge-carrier transport properties. The incorporation of these heterostructures into OFETs enables a precise adjustment of the threshold voltage by using the modulation doping concept.

Surface Doping Induced Mobility Modulation Effect for Transport Enhancement in Organic Single Crystal Transistors

Enhanced performance in doped micro-nano porous organic thin-film transistors

Overall Enhancement of Electrical Properties of Indium Oxide Thin-Film Transistors by Surface Doping

Carrier Modulation and Effective Passivation of Tin Oxide Thin-Film Transistors by Organic Surface Doping

Modulation Doping for Threshold Voltage Control in Organic Field-Effect Transistors

Influence Of The Dielectric And Of The Active Layer Doping On The Fet Mobility In Ppv-Based Devices

Site-specific chemical doping reveals electron atmospheres at the surfaces of organic semiconductor crystals

Unravelling Doping Effects on Pedot at the Molecular Level: from Geometry to Thermoelectric Transport Properties

Improved Electron Transport with Reduced Contact Resistance in N-Doped Polymer Field-Effect Transistors with a Dimeric Dopant

Interface Collaborative Strategy for High Mobility Organic Single‐Crystal Field‐Effect Transistors with Ideal Current–Voltage Curves

Semiconductor/dielectric Interface in Organic Field-Effect Transistors: Charge Transport, Interfacial Effects, and Perspectives with 2D Molecular Crystals

Charged-impurity free printing-based diffusion doping in molybdenum disulfide field-effect transistors

Ambipolar and N/p-Type Conduction Enhancement of Two-Dimensional Materials by Surface Charge Transfer Doping

Enhanced Performance of Organic Field-Effect Transistors by a Molecular Dopant with High Electron Affinity.

Film-Depth-Dependent Charge Mobilities in Organic Semiconductor Films

Dopant-induced Morphology of Organic Semiconductors Resulting in High Doping Performance

Enhanced Mobility in C8-BTBT Field-effect Transistors with Iodine-doping

Carrier confinement for mobility enhancement in dual-gate organic thin-film transistors

Mobility enhancement in heavily doped semiconductors via electron cloaking

Band-Like Electron Transport in Organic Transistors and Implication of the Molecular Structure for Performance Optimization

Field-Effect Charge Transport in Doped Polymer Semiconductor-Insulator Alternating Bulk Junctions with Ultrathin Transport Layers