Abstract:Organic electronics is the technology enabling truly flexible electronic devices. However, despite continuous improvements in the charge-carrier mobility, devices used for digital circuits based on organic field-effect transistors (OFETs) have still not achieved a commercial breakthrough. A substantial hurdle to the realization of effective digital circuitry is the proper control of the threshold voltage Vth. Previous approaches include doping or self-assembled monolayers to provide the threshold voltage control. However, while self-assembled monolayers-modified OFETs often do not show the level of reproducibility which is required in digital circuit engineering, direct doping of the channel material results in a poor on/off ratio leading to unfavorable power dissipation. Furthermore, direct doping of the channel material in organic semiconductors could cause the formation of trap states impeding the charge-carrier transport. Employing the concept of modulation-doped field-effect transistors (MODFETs), which is well established in inorganic electronics, the semiconductor-dopant interaction is significantly reduced, thereby solving the above-described problems. Here, we present the concept of an organic semiconductor MODFET which is composed of an organic-organic heterostructure between a highly doped wide-energy-gap material and an undoped narrow-energy-gap material. The effectiveness of charge transfer across the interface is controlled by the doping concentration and thickness of an undoped buffer layer. A complete picture of the energy landscape of this heterostructure is drawn using impedance spectroscopy and ultraviolet photoelectron spectroscopy. Furthermore, we analyze the effect of the dopant density on the charge-carrier transport properties. The incorporation of these heterostructures into OFETs enables a precise adjustment of the threshold voltage by using the modulation doping concept.

Enhanced Mobility in C8-BTBT Field-effect Transistors with Iodine-doping

A Transfer Method for High‐Mobility, Bias‐Stable, and Flexible Organic Field‐Effect Transistors

Controllable Thin-Film Morphology and Structure for 2,7-Dioctyl[1]benzothieno[3,2-b][1]benzothiophene (c8btbt) Based Organic Field-Effect Transistors

Enhanced Performance of Organic Field-Effect Transistors by a Molecular Dopant with High Electron Affinity.

Enhanced performance in doped micro-nano porous organic thin-film transistors

Carrier confinement for mobility enhancement in dual-gate organic thin-film transistors

Dopant/Semiconductor/Electret Trilayer Architecture for High‐Performance Organic Field‐Effect Transistors

Surface Doping Induced Mobility Modulation Effect for Transport Enhancement in Organic Single Crystal Transistors

Manipulating Doping of Organic Semiconductors by Reactive Oxygen for Field-Effect Transistors

Polymer Electret Improves the Performance of the Oxygen-Doped Organic Field-Effect Transistors

Organic-semiconductor: Polymer-electret Blends for High-Performance Transistors

High Mobility Solution-Processed C-8-BTBT Organic Thin-Film Transistors Via UV-ozone Interface Modification

High Mobility Wide Bandgap Polymer Realized by a Combined Modification Strategy of Processing Solvent and Dielectric Interface

Marangoni Effect‐Controlled Growth of Oriented Film for High Performance C8‐BTBT Transistors

Ultrahigh Mobility and Efficient Charge Injection in Monolayer Organic Thin-Film Transistors on Boron Nitride.

Pursuing High‐Performance Organic Field‐Effect Transistors through Organic Salt Doping

Modulation Doping for Threshold Voltage Control in Organic Field-Effect Transistors

Significant Improvement of 2,9-Dph-dntt Organic Thin-Film Transistors Based on Organic Heterojunction Buffer Layer

Liquid Crystal-Like Active Layer for High-Performance Organic Field-Effect Transistors

The Mobility Improvement of Organic Thin Film Transistors by Introducing ZnO-nanrods As an Zctive Layer

Interface Collaborative Strategy for High Mobility Organic Single‐Crystal Field‐Effect Transistors with Ideal Current–Voltage Curves