The Distribution of Genotype and Allelic Frequency of IL28B Gene Polymorphism in Andhra Pradesh, India.

S. Sivaprasad,P. Rao,Rajesh Gupta,K. Ashwini,D. Reddy

DOI: https://doi.org/10.1016/S0973-6883(12)60098-X

2012-06-01

Journal of Clinical and Experimental Hepatology

Abstract:

What problem does this paper attempt to address?

Polymer Electret Improves the Performance of the Oxygen-Doped Organic Field-Effect Transistors

Dongfan Li,Yuanwei Zhu,Peng Wei,Wanlong Lu,Shengtao Li,Steven Wang,Ben Bin Xu,Guanghao Lu

DOI: https://doi.org/10.1109/led.2020.3026486

IF: 4.8157

2020-11-01

IEEE Electron Device Letters

Abstract:Chemical doping is widely used in the electronic devices. In p-type semiconductor thin films, oxygen doping fills the hole traps and increases hole concentrations, improving the performance of the organic field-effect transistors (OFETs). Due to the low ionization potential for p-type semiconductors, the superfluous holes induced by the oxygen doping degrades the OFETs off-state leakage performance. On the other hand, for p-type semiconductors with high ionization potential (up to 5.5-6.0 eV), the limited oxidation of oxygen is hard to achieve satisfactory doping concentrations to fill the trap states. This refers to the well-known intrinsic incompatibility between the oxygen doping and high-performance OFETs. Herein, a novel strategy is introduced to overcome the incompatibility and achieve high-performance OFETs by using the structural polymer electret. That is, moderate hole concentrations induced by low-pressure (30 Pa) oxygen plasma fill the hole traps within semiconductor. And the built-in field resulted from polymer electret accumulates the holes inside semiconductor near the semiconductor/electret interface, thus improving the OFETs performance. Using a model organic semiconductor with high ionization potential-2,7-didodecyl[1]benzothieno [3,2-b][1]benzothiophene (C12-BTBT) as an example, the high-performance OFETs with field-effect mobility ( $mu _{FET}$ ) of 3.5 cm2V−1 s−1, subthreshold-swing (SS) of 110 mV decade−1, on-off ratio of 104, and widely-tunable threshold voltage ( ${V} _{t}$ ) are realized at a low voltage below 2 V in the open air.

engineering, electrical & electronic
Reduced contact resistance in top-contact organic field-effect transistors by interface contact doping

Ji-Ling Hou,Daniel Kasemann,Johannes Widmer,Alrun A. Günther,Björn Lüssem,Karl Leo

DOI: https://doi.org/10.1063/1.4943646

IF: 4

2016-03-07

Applied Physics Letters

Abstract:Emerging organic integrated electronics require capability of high speed and the compatibility with high-resolution structuring processes such as photolithography. When downscaling the channel length, the contact resistance is known to limit the performance of the short channel devices. In this report, orthogonal photolithography is used for the patterning of the source/drain electrodes of the organic field-effect transistors (OFETs) as well as the interface dopant insertion layers for further modifications of the contact resistance. Bottom-gate top-contact pentacene OFETs with different thicknesses of the p-dopant 2,2′-(perfluoronaphthalene-2,6-diylidene)dimalononitrile under the Au electrodes show a significant decrease in threshold voltage from −2.2 V to −0.8 V and in contact resistance from 55 kΩ cm to 10 kΩ cm by adding a 1 nm thin dopant interlayer. The influence of doping on charge carrier injection is directly visible in the temperature-dependent output characteristics and a charge-transfer activation energy of ∼20 meV is obtained. Our results provide a systematic study of interface contact doping and also show the connection between interface contact doping and improved charge carrier injection by the activation of charge transfer process.

physics, applied
Introducing a Nonvolatile N‐Type Dopant Drastically Improves Electron Transport in Polymer and Small‐Molecule Organic Transistors

Julianna Panidi,Jaspreet Kainth,Alexandra F. Paterson,Simeng Wang,Leonidas Tsetseris,Abdul‐Hamid Emwas,Martyn A. McLachlan,Martin Heeney,Thomas D. Anthopoulos

DOI: https://doi.org/10.1002/adfm.201902784

IF: 19

2019-06-18

Advanced Functional Materials

Abstract:Molecular doping is a powerful yet challenging technique for enhancing charge transport in organic semiconductors (OSCs). While there is a wealth of research on p‐type dopants, work on their n‐type counterparts is comparatively limited. Here, reported is the previously unexplored n‐dopant (12a,18a)‐5,6,12,12a,13,18,18a,19‐octahydro‐5,6‐dimethyl‐ 13,18[1′,2′]‐benzenobisbenzimidazo [1,2‐b:2′,1′‐d]benzo[i][2.5]benzodiazo‐cine potassium triflate adduct (DMBI‐BDZC) and its application in organic thin‐film transistors (OTFTs). Two different high electron mobility OSCs, namely, the polymer poly[[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐ bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2′‐bithiophene)] and a small‐molecule naphthalene diimides fused with 2‐(1,3‐dithiol‐2‐ylidene)malononitrile groups (NDI‐DTYM2) are used to study the effectiveness of DMBI‐BDZC as a n‐dopant. N‐doping of both semiconductors results in OTFTs with improved electron mobility (up to 1.1 cm2 V−1 s−1), reduced threshold voltage and lower contact resistance. The impact of DMBI‐BDZC incorporation is particularly evident in the temperature dependence of the electron transport, where a significant reduction in the activation energy due to trap deactivation is observed. Electron paramagnetic resonance measurements support the n‐doping activity of DMBI‐BDZC in both semiconductors. This finding is corroborated by density functional theory calculations, which highlights ground‐state electron transfer as the main doping mechanism. The work highlights DMBI‐BDZC as a promising n‐type molecular dopant for OSCs and its application in OTFTs, solar cells, photodetectors, and thermoelectrics.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Toward Efficient Charge Transport of Polymer-Based Organic Field-Effect Transistors: Molecular Design, Processing, and Functional Utilization

Yangjiang Wu,Yan Zhao,Yunqi Liu

DOI: https://doi.org/10.1021/accountsmr.1c00149

2021-01-01

Accounts of Materials Research

Abstract:Polymer-based organic field-effect transistors (OFETs) have attracted great attention owing to their significantly improved performance and the recently emerged prospects for broad applications. The charge carrier mobility of polymer-based OFETs has been improved from 10(-5) to more than 10 cm(2) s(-1) over the past three decades. With the carrier mobility dose to or higher than that of amorphous silicon, the application fields of polymer-based OFETs have been extended from sensing to logic or drive circuits. During OFET operation, the charge carriers are successively injected in and then transferred across the semiconducting channel under an external electric field. The behavior of the charge carriers is determined by both charge injection and charge transport. Well-matched frontier molecular orbital (FMO) energy levels and optimized hierarchical structures of semiconducting polymers are essential for the realization of high-performance polymer-based OFETs. In this Account, we mainly demonstrate our recent progress in molecular design strategies and fabrication processing methods for high-performance semiconducting polymers. Moreover, we provide some examples of integrated applications of polymer-based OFETs. The convenient FMO energy level modulation and excellent molecular designability of donor-acceptor (D-A) conjugated polymers facilitate studies on their performance enhancement in OFETs. Proper molecular design of the D-A polymer backbone and side chain can significantly contribute to charge injection enhancement, transport pathway establishment, and trap reduction, thereby resulting in efficient charge transport. Moreover, special fabrication processes of OFET devices can further enhance the charge transport by optimizing the hierarchical structures of semiconducting polymers, thereby enhancing their carrier mobility and stability. By employing high-performance semiconducting polymers as the semiconducting channel of OFETs, various applications can be implemented. These applications range from small-scale logic signal processing and periodic signal generation to complex visual perception systems, indicating broad application prospects in human life. The works on performance improvement and functional utilization of the semiconducting polymers in OFETs might provide insights for molecular design strategies and applications for future plastic electronics.
Efficient n-Dopants and Their Roles in Organic Electronics

Zhengyang Bin,Ziyang Liu,Yong Qiu,Lian Duan

DOI: https://doi.org/10.1002/adom.201800536

IF: 9

2018-01-01

Advanced Optical Materials

Abstract:The n-type doping is an effective method to improve electron injection/extraction which not only provides a way to fine-control the energy level of organic semiconductors, but also greatly improves the efficiency and even enhances the stability of organic electronics, such as organic light-emitting diodes, organic solar cells, and organic field-effect transistors. Over the decades, n-dopants are highly concerned by researchers and rapid advances are made in n-doping species and models. In this paper, the recent progress on efficient n-dopants and their roles in organic electronics are comprehensively reviewed from the perspective of doping physics, doping chemistry, and doping performance for devices.
Transition metal-catalysed molecular n-doping of organic semiconductors

Han Guo,Chi-Yuan Yang,Xianhe Zhang,Alessandro Motta,Kui Feng,Yu Xia,Yongqiang Shi,Ziang Wu,Kun Yang,Jianhua Chen,Qiaogan Liao,Yumin Tang,Huiliang Sun,Han Young Woo,Simone Fabiano,Antonio Facchetti,Xugang Guo

DOI: https://doi.org/10.1038/s41586-021-03942-0

IF: 64.8

2021-11-03

Nature

Abstract:Chemical doping is a key process for investigating charge transport in organic semiconductors and improving certain (opto)electronic devices1–9. N(electron)-doping is fundamentally more challenging than p(hole)-doping and typically achieves a very low doping efficiency (η) of less than 10%1,10. An efficient molecular n-dopant should simultaneously exhibit a high reducing power and air stability for broad applicability1,5,6,9,11, which is very challenging. Here we show a general concept of catalysed n-doping of organic semiconductors using air-stable precursor-type molecular dopants. Incorporation of a transition metal (for example, Pt, Au, Pd) as vapour-deposited nanoparticles or solution-processable organometallic complexes (for example, Pd2(dba)3) catalyses the reaction, as assessed by experimental and theoretical evidence, enabling greatly increased η in a much shorter doping time and high electrical conductivities (above 100 S cm−1; ref. 12). This methodology has technological implications for realizing improved semiconductor devices and offers a broad exploration space of ternary systems comprising catalysts, molecular dopants and semiconductors, thus opening new opportunities in n-doping research and applications12, 13.

multidisciplinary sciences
Highly Enhanced Charge Injection in Thienoacene-Based Organic Field-Effect Transistors with Chemically Doped Contact

Takeo Minari,Peter Darmawan,Chuan Liu,Yun Li,Yong Xu,Kazuhito Tsukagoshi

DOI: https://doi.org/10.1063/1.3690949

IF: 4

2012-01-01

Applied Physics Letters

Abstract:We describe the mechanism of contact resistance reduction and improvement in device performance of organic field-effect transistors by chemical doping at the contact interface. Insertion of iron(III)trichloride into the contact interface significantly reduced the contact resistance from 200 to 8.8 kΩ cm at a gate voltage of −40 V, and a field-effect mobility of 7.0 cm2/V s was achieved in devices based on dioctylbenzothienobenzothiophene. The improved charge injection is attributable to a reduction in the depletion layer thickness at the contact interface and occupation of trap states in the access region due to the generation of charge carriers by contact doping.
Solution doping of organic semiconductors using air-stable n-dopants

Yabing Qi,Swagat K. Mohapatra,Sang Bok Kim,Stephen Barlow,Seth R. Marder,Antoine Kahn

DOI: https://doi.org/10.1063/1.3689760

IF: 4

2012-02-20

Applied Physics Letters

Abstract:Solution-based n-doping of the polymer poly{[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)} [P(NDI2OD-T2)] and the small molecule 6,13-bis(tri(isopropyl)silylethynyl)pentacene (TIPS-pentacene) is realized with the air-stable dimers of rhodocene, [RhCp2]2, and ruthenium(pentamethylcyclopentdienyl)(1,3,5-triethylbenzene), [Cp*Ru(TEB)]2. Fermi level shifts, measured by direct and inverse photoemission spectroscopy, and orders of magnitude increase in current density and film conductivity point to strong n-doping in both materials. The strong reducing power of these air-stable dopants is demonstrated through the n-doping of TIPS-pentacene, a material with low electron affinity (3.0 eV). Doping-induced reduction of the hopping transport activation energy indicates that the increase in film conductivity is due in part to the filling of deep gap states by carriers released by the dopants.

physics, applied
Surface Doping Induced Mobility Modulation Effect for Transport Enhancement in Organic Single Crystal Transistors

Yu Shan,Jiawei Wang,Zean Guo,Dongyang Liu,Ying Zhao,Nianduan Lu,Ling Li

DOI: https://doi.org/10.1002/adma.202205517

IF: 29.4

2022-10-29

Advanced Materials

Abstract:Molecular doping has conventionally been an effective way to improve the electrical transport performances in organic field effect transistors (OFETs), while corresponding mechanisms associated with specific doping techniques have been less investigated and discussed in detail. Here, based on ultra‐thin DNTT single crystals we realized robust transconductance enhancements in OFETs upon surface molecular doping realized via van der Waals epitaxially growing crystalline F6TCNNQ onto the single crystal's surface. We proposed that, it is the mobility modulation effect (MME) from the interactions between charge transfer interface and gate electric field, that contributes to more weighted bulk carriers, and finally improve charge transport performances. The evaluations were further supported by SKPM's surface potential characterizations, which manifested the gate induced more delocalized holes near the charge transfer interfaces. SCLC investigations, numerical calculations, and theoretical mobility modeling were also performed to corroborate the analysis. This study could deepen the understanding of charge transport in doped semiconductors and provide effective ways for optimizing the electrical performance of organic devices. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Doping: A Key Enabler for Organic Transistors

Yong Xu,Huabin Sun,Ao Liu,Hui‐Hui Zhu,Wenwu Li,Yen‐Fu Lin,Yong‐Young Noh

DOI: https://doi.org/10.1002/adma.201801830

IF: 29.4

2018-01-01

Advanced Materials

Abstract:Organic field‐effect transistors (OFETs) are the central building blocks of organic electronics, but still suffer from low performance and manufacturing difficulties. This is due in part to the absence of doping, which is mostly excluded from OFET applications for the concern about uncontrollable dopant diffusion. Doping enabled the modern semiconductor industry to build essential components like Ohmic contacts and P–N junctions, empowering devices to function as designed. Recent breakthroughs in organic semiconductors and doping techniques demonstrated that doping can also be a key enabler for high‐performance OFETs. However, the knowledge of organic doping remains limited particularly for OFET use. Therefore, this review addresses OFET doping from a device perspective. The paper overviews doping basics and roles in advanced complementary technologies. These fundamentals help to understand why and how doping provides the desired transistor characteristics. Typical OFETs without doping are discussed, with consideration for operating principle and problems caused by the absence of doping. Achievements for channel, contact, and overall doping are also examined to clarify the corresponding doping roles. Finally, doping mechanisms, techniques, and dopants associated with OFET applications are reviewed. This paper promotes fundamental understanding of OFET doping for the development of high‐performance OFETs with doped components.
Thermally Activated n-Doping of Organic Semiconductors Achieved by N-Heterocyclic Carbene Based Dopant

Yi-Fan Ding,Chi-Yuan Yang,Chun-Xi Huang,Yang Lu,Ze-Fan Yao,Chen-Kai Pan,Jie-Yu Wang,Jian Pei

DOI: https://doi.org/10.1002/anie.202011537

2021-03-08

Abstract:Molecular doping plays an important role in the modification of carrier density of organic semiconductors thus enhancing their optoelectronic performance. However, efficient n-doping remains challenging, especially owing to the lack of strongly reducing and air-stable n-dopants. Herein, an N-heterocyclic carbene (NHC) precursor, DMImC, is developed as a thermally activated n-dopant with the excellent stability in air. Its thermolysis in situ regenerates free NHC and subsequently dopes typical organic semiconductors. In sequentially doped FBDPPV films, DMImC does not disturb the π-π packing of the polymer and achieves good miscibility with the polymer. As a result, a high electrical conductivity of up to 8.4 S cm-1 is obtained. Additionally, the thermally activated doping and the excellent air stability permit DMImC to be noninteractively co-processed with polymers in air. Our results reveal that DMImC can be served as an efficient n-dopant suitable for various organic semiconductors.
Pursuing High‐Performance Organic Field‐Effect Transistors through Organic Salt Doping

Dingyi Lu,Fanming Huang,Caifang Gao,Jianming Yang,Jing Guo,Yuanyuan Hu,Qinye Bao,Yong‐Young Noh,Junhao Chu,Wenwu Li

DOI: https://doi.org/10.1002/adfm.202111285

IF: 19

2022-01-22

Advanced Functional Materials

Abstract:Doping is an effective strategy for controlling the charge density and device performance of thin‐film electronics. Herein, a new doping system is reported for organic electronics using the organic salt p‐dopant N,N‐dimethylanilinium tetrakis(pentafluorophenyl)borate (DTB) to significantly improve the device performance of indacenodithiophene‐co‐benzothia‐diazole (IDT‐BT) organic field‐effect transistors (OFETs). With optimized doping ratios, the hole mobility increases almost fourfold from 0.32 to 1.15 cm2 V–1 s–1 and the threshold voltage reduces from −38 to 0 V. Moreover, systematical electrical characterizations demonstrate that the contact resistance and activation energy dramatically reduce in the doped devices. Such reductions are ascribed to the shift of the Fermi energy level closer to the transport level and the lowered density of trap states in doped semiconductors, as revealed by ultraviolet photoelectron spectroscopy and low‐frequency noise measurements, respectively. This study also demonstrates that the trap density increases when the doping ratio is high, explaining the device performance degradation at high doping ratios. This is the first time that DTB organic salt is used as an efficient dopant to improve the performance of OFETs, demonstrating a promising route for employing organic salt dopants to achieve high‐performance OFETs. An organic salt N,N‐dimethylanilinium tetrakis(pentafluorophenyl)borate (DTB) is reported as a p‐dopant that can significantly improve the device performance of indacenodithiophene‐co‐benzothiadiazole (IDT‐BT) organic field‐effect transistors. The physics behind the performance variation and the influence of doping ratios on the electronic structure of IDT‐BT is clarified. This is the first time that DTB has shown promising application as a p‐dopant.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
A Thermally Activated And Highly Miscible Dopant For N-Type Organic Thermoelectrics

Chi-Yuan Yang,Yi-Fan Ding,Dazhen Huang,Jue Wang,Ze-Fan Yao,Chun-Xi Huang,Yang Lu,Hio-Ieng Un,Fang-Dong Zhuang,Jin-Hu Dou,Chong-An Di,Daoben Zhu,Jie-Yu Wang,Ting Lei,Jian Pei

DOI: https://doi.org/10.1038/s41467-020-17063-1

IF: 16.6

2020-01-01

Nature Communications

Abstract:N-doping plays an irreplaceable role in controlling the electron concentration of organic semiconductors thus to improve performance of organic semiconductor devices. However, compared with many mature p-doping methods, n-doping of organic semiconductor is still of challenges. In particular, dopant stability/processability, counterion-semiconductor immiscibility and doping induced microstructure non-uniformity have restricted the application of n-doping in high-performance devices. Here, we report a computer-assisted screening approach to rationally design of a triaminomethane-type dopant, which exhibit extremely high stability and strong hydride donating property due to its thermally activated doping mechanism. This triaminomethane derivative shows excellent counterion-semiconductor miscibility (counter cations stay with the polymer side chains), high doping efficiency and uniformity. By using triaminomethane, we realize a record n-type conductivity of up to 21Scm(-1) and power factors as high as 51 mu Wm(-1)K(-2) even in films with thicknesses over 10 mu m, and we demonstrate the first reported all-polymer thermoelectric generator. Realizing efficient n-doping in organic thermoelectrics remains a challenge due to dopant-semiconductor immiscibility, poor dopant stability and low doping efficiency. Here, the authors use computer-assisted screening to develop n-dopants for thermoelectric polymers that show record power factors.
[Comparative studies on the effect of beta 1- and beta 2-adrenergic agonists on the human adipose-tissue-adenylate-cyclase system].

H. Kather,B. Vogt,H. Baumgarten,B. Simon

Abstract:
Enhancing the Electrochemical Doping Efficiency in Diketopyrrolopyrrole‐Based Polymer for Organic Electrochemical Transistors

Xihu Wu,Qian Liu,Abhijith Surendran,Steven E. Bottle,Prashant Sonar,Wei Lin Leong

DOI: https://doi.org/10.1002/aelm.202000701

IF: 6.2

2020-11-09

Advanced Electronic Materials

Abstract:The increasing interest in organic electrochemical transistors (OECTs) for next‐generation bioelectronic applications motivates the design of novel conjugated polymers with good electronic and ionic transport. Many conjugated polymers developed for organic field‐effect transistors (OFETs) exhibit high charge carrier mobilities but they are not suitable for OECTs due to poor ion‐uptake arising from the non polar alkyl chain substituted on the conjugated backbone. They are also sensitive to moisture, resulting in poor performance in aqueous electrolytes. Herein, the widely used conjugated building block diketopyrrolopyrrole (DPP) is used and functionalized it with polar triethylene glycol side chains (PTDPP‐DT) to promote ion penetration. The electrical performance of PTDPP‐DT based OECT in two types of aqueous electrolytes is studied and the electrochemical doping response is investivated. It is found that the tetrafluoroborate (BF4−) anion with large crystallographic radius allows high‐efficiency electrochemical doping of the PTDPP‐DT polymer, and thus gives rise to the high transconductance of 21.4 ± 4.8 mS with good device stability, where it maintained over 91 % of its doped‐state drain current after over 500 cycles of pulse measurement.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
N-Type Doping of Naphthalenediimide-Based Random Donor-Acceptor Copolymers to Enhance Transistor Performance and Structural Crystallinity

Yun Chang,Ying-Sheng Wu,Shih-Huang Tung,Wen-Chang Chen,Chu-Chen Chueh,Cheng-Liang Liu

DOI: https://doi.org/10.1021/acsami.2c23067

IF: 9.5

2023-03-17

ACS Applied Materials & Interfaces

Abstract:An integrated strategy of molecular design and conjugated polymer doping is proposed to improve the electronic characteristics for organic field effect transistor (OFET) applications. Here, a series of soluble naphthalene diimide (NDI)-based random donor-acceptor copolymers with selenophene π-conjugated linkers and four acceptors with different electron-withdrawing strengths (named as rNDI-N/S/NN/SS) are synthesized, characterized, and used for OFETs. N-type doping of NDI-based random copolymers...

materials science, multidisciplinary,nanoscience & nanotechnology
n-type charge transport in heavily p-doped polymers

Zhiming Liang,Hyun Ho Choi,Xuyi Luo,Tuo Liu,Ashkan Abtahi,Uma Shantini Ramasamy,J. Andrew Hitron,Kyle N. Baustert,Jacob L. Hempel,Alex M. Boehm,Armin Ansary,Douglas R. Strachan,Jianguo Mei,Chad Risko,Vitaly Podzorov,Kenneth R. Graham

DOI: https://doi.org/10.1038/s41563-020-00859-3

IF: 41.2

2021-01-04

Nature Materials

Abstract:It is commonly assumed that charge-carrier transport in doped π-conjugated polymers is dominated by one type of charge carrier, either holes or electrons, as determined by the chemistry of the dopant. Here, through Seebeck coefficient and Hall effect measurements, we show that mobile electrons contribute substantially to charge-carrier transport in π-conjugated polymers that are heavily p-doped with strong electron acceptors. Specifically, the Seebeck coefficient of several p-doped polymers changes sign from positive to negative as the concentration of the oxidizing agents FeCl3 or NOBF4 increase, and Hall effect measurements for the same p-doped polymers reveal that electrons become the dominant delocalized charge carriers. Ultraviolet and inverse photoelectron spectroscopy measurements show that doping with oxidizing agents results in elimination of the transport gap at high doping concentrations. This approach of heavy p-type doping is demonstrated to provide a promising route to high-performance n-type organic thermoelectric materials.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter
Achieving Efficient N-Doping of Conjugated Polymers by Molecular Dopants.

Yang Lu,Jie-Yu Wang,Jian Pei

DOI: https://doi.org/10.1021/acs.accounts.1c00223

IF: 24.466

2021-01-01

Accounts of Chemical Research

Abstract:ConspectusMolecular doping is one of the most central propositions in the field of organic electronics. Unlike classical inorganic semiconductors doped by atomic substitution, organic conjugated materials react with molecular dopants, and then intermolecular charge transfer is involved within. Therefore, the complex noncovalent interactions between two components often cause the molecular dopant to destroy the orderly stacking of the host organic materials and reduce the original properties of the material, such as carrier mobility, which here we call the "doping dilemma." Recently, many studies focus on improving p-doping efficiency and electrical conductivity of doped conjugated polymers; however, the development of n-type molecular doping currently lags far behind that of its p-counterpart. It is well-known that both efficient p- and n-type molecular doping are indispensable in various organic electronic devices, including light-emitting diodes, photovoltaics, field-effect transistors, and thermoelectrics. It is thus an urgent requirement to achieve efficient n-doping in conjugated polymers.In this Account, we give a brief overview of our efforts to improve the n-doping efficiency in conjugated polymers with several strategies from the aspects of the polymer/dopant molecular design and the exploration of the n-type molecular doping mechanism and charge transport mechanism in n-doped organic materials. For the conjugated polymer engineering, we first demonstrate that increasing the electron affinity of the host polymer through halogen substitution can boost the n-doping efficiency. Still, the rigid coplanar backbones of conjugated polymers play a crucial role in the polaron delocalization and final electrical performance. In addition, we emphasize the importance of morphology control in the doped polymers to address the "doping dilemma." For n-dopants designing, we summarize some basic guidelines from molecular sizes and shapes, the interaction between dopants (or dopant cations) and polymers, and the effects of dopants on morphology to design high-efficacy n-type molecular dopants. We propose that the polymers and the dopants need to be treated as a whole system; while enhancing the ionization efficiency, more attention should be paid to the carrierization (free-carrier generation) efficiency of these binary systems. In the end, we adopt the n-type polymer thermoelectric material as an example to discuss the grand challenges encountered in practical applications of n-doped conjugated polymers. The air stability and micrometer-thick thermo-leg processing of n-doped polymers are highlighted for thermoelectric applications. It is our hope that this Account showcases a blueprint for rational approaches and a deep understanding toward the design and development of efficient n-doping in conjugated polymers, bringing n-doped organic materials into the next era.
Efficient N‐doping of Polymeric Semiconductors Through Controlling the Dynamics of Solution‐State Polymer Aggregates

Miao Xiong,Xinwen Yan,Jia-Tong Li,Song Zhang,Zhiqiang Cao,Nathaniel Prine,Yang Lu,Jie-Yu Wang,Xiaodan Gu,Ting Lei

DOI: https://doi.org/10.1002/anie.202015216

2021-01-01

Abstract:AbstractDoping of polymeric semiconductors limits the miscibility between polymers and dopants. Although significant efforts have been devoted to enhancing miscibility through chemical modification, the electrical conductivities of n‐doped polymeric semiconductors are usually below 10 S cm−1. We report a different approach to overcome the miscibility issue by modulating the solution‐state aggregates of conjugated polymers. We found that the solution‐state aggregates of conjugated polymers not only changed with solvent and temperature but also changed with solution aging time. Modulating the solution‐state polymer aggregates can directly influence their solid‐state microstructures and miscibility with dopants. As a result, both high doping efficiency and high charge‐carrier mobility were simultaneously obtained. The n‐doped electrical conductivity of P(PzDPP‐CT2) can be tuned up to 32.1 S cm−1. This method can also be used to improve the doping efficiency of other polymer systems (e.g. N2200) with different aggregation tendencies and behaviors.
Synergistic Use of All-Acceptor Strategies for the Preparation of an Organic Semiconductor and the Realization of High Electron Transport Properties in Organic Field-Effect Transistors

Shiwei Ren,Wenqing Zhang,Zhuoer Wang,Abderrahim Yassar,Zhiting Liao,Zhengran Yi

DOI: https://doi.org/10.3390/polym15163392

IF: 5

2023-08-14

Polymers

Abstract:The development of n-type organic semiconductor materials for transporting electrons as part of logic circuits is equally important to the development of p-type materials for transporting holes. Currently, progress in research on n-type materials is relatively backward, and the number of polymers with high electron mobility is limited. As the core component of the organic field-effect transistor (OFET), the rational design and judicious selection of the structure of organic semiconductor materials are crucial to enhance the performance of devices. A novel conjugated copolymer with an all-acceptor structure was synthesized based on an effective chemical structure modification and design strategy. PDPPTT-2Tz was obtained by the Stille coupling of the DPPTT monomer with 2Tz-SnMe3, which features high molecular weight and thermal stability. The low-lying lowest unoccupied molecular orbital (LUMO) energy level of the copolymer was attributed to the introduction of electron-deficient bithiazole. DFT calculations revealed that this material is highly planar. The effect of modulation from a donor–acceptor to acceptor–acceptor structure on the improvement of electron mobility was significant, which showed a maximum value of 1.29 cm2 V−1 s−1 and an average value of 0.81 cm2 V−1 s−1 for electron mobility in BGBC-based OFET devices. Our results demonstrate that DPP-based polymers can be used not only as excellent p-type materials but also as promising n-type materials.

polymer science

The Distribution of Genotype and Allelic Frequency of IL28B Gene Polymorphism in Andhra Pradesh, India.

Polymer Electret Improves the Performance of the Oxygen-Doped Organic Field-Effect Transistors

Reduced contact resistance in top-contact organic field-effect transistors by interface contact doping

Introducing a Nonvolatile N‐Type Dopant Drastically Improves Electron Transport in Polymer and Small‐Molecule Organic Transistors

Toward Efficient Charge Transport of Polymer-Based Organic Field-Effect Transistors: Molecular Design, Processing, and Functional Utilization

Efficient n-Dopants and Their Roles in Organic Electronics

Transition metal-catalysed molecular n-doping of organic semiconductors

Highly Enhanced Charge Injection in Thienoacene-Based Organic Field-Effect Transistors with Chemically Doped Contact

Solution doping of organic semiconductors using air-stable n-dopants

Surface Doping Induced Mobility Modulation Effect for Transport Enhancement in Organic Single Crystal Transistors

Doping: A Key Enabler for Organic Transistors

Thermally Activated n-Doping of Organic Semiconductors Achieved by N-Heterocyclic Carbene Based Dopant

Pursuing High‐Performance Organic Field‐Effect Transistors through Organic Salt Doping

A Thermally Activated And Highly Miscible Dopant For N-Type Organic Thermoelectrics

[Comparative studies on the effect of beta 1- and beta 2-adrenergic agonists on the human adipose-tissue-adenylate-cyclase system].

Enhancing the Electrochemical Doping Efficiency in Diketopyrrolopyrrole‐Based Polymer for Organic Electrochemical Transistors

N-Type Doping of Naphthalenediimide-Based Random Donor-Acceptor Copolymers to Enhance Transistor Performance and Structural Crystallinity

n-type charge transport in heavily p-doped polymers

Achieving Efficient N-Doping of Conjugated Polymers by Molecular Dopants.

Efficient N‐doping of Polymeric Semiconductors Through Controlling the Dynamics of Solution‐State Polymer Aggregates

Synergistic Use of All-Acceptor Strategies for the Preparation of an Organic Semiconductor and the Realization of High Electron Transport Properties in Organic Field-Effect Transistors