Abstract:Molecular doping is a powerful yet challenging technique for enhancing charge transport in organic semiconductors (OSCs). While there is a wealth of research on p‐type dopants, work on their n‐type counterparts is comparatively limited. Here, reported is the previously unexplored n‐dopant (12a,18a)‐5,6,12,12a,13,18,18a,19‐octahydro‐5,6‐dimethyl‐ 13,18[1′,2′]‐benzenobisbenzimidazo [1,2‐b:2′,1′‐d]benzo[i][2.5]benzodiazo‐cine potassium triflate adduct (DMBI‐BDZC) and its application in organic thin‐film transistors (OTFTs). Two different high electron mobility OSCs, namely, the polymer poly[[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐ bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2′‐bithiophene)] and a small‐molecule naphthalene diimides fused with 2‐(1,3‐dithiol‐2‐ylidene)malononitrile groups (NDI‐DTYM2) are used to study the effectiveness of DMBI‐BDZC as a n‐dopant. N‐doping of both semiconductors results in OTFTs with improved electron mobility (up to 1.1 cm2 V−1 s−1), reduced threshold voltage and lower contact resistance. The impact of DMBI‐BDZC incorporation is particularly evident in the temperature dependence of the electron transport, where a significant reduction in the activation energy due to trap deactivation is observed. Electron paramagnetic resonance measurements support the n‐doping activity of DMBI‐BDZC in both semiconductors. This finding is corroborated by density functional theory calculations, which highlights ground‐state electron transfer as the main doping mechanism. The work highlights DMBI‐BDZC as a promising n‐type molecular dopant for OSCs and its application in OTFTs, solar cells, photodetectors, and thermoelectrics.

Solution doping of organic semiconductors using air-stable n-dopants

n-Doping of organic electronic materials using air-stable organometallics.

Electron Transport and Nanomorphology in Solution‐Processed Polymeric Semiconductor N‐doped with an Air‐Stable Organometallic Dimer

A Novel Solution‐Processable N‐dopant Based on 1,4‐dihydropyridine Motif for High Electrical Conductivity of Organic Semiconductors

Solution-based Electrical Doping of Semiconducting Polymer Films over a Limited Depth

Thermally Activated n-Doping of Organic Semiconductors Achieved by N-Heterocyclic Carbene Based Dopant

Transition metal-catalysed molecular n-doping of organic semiconductors

Introducing a Nonvolatile N‐Type Dopant Drastically Improves Electron Transport in Polymer and Small‐Molecule Organic Transistors

Fermi Level Pinning Induced by Doping in Air Stable n-Type Organic Semiconductor

Doping Versatile N-Type Organic Semiconductors Via Room Temperature Solution-Processable Anionic Dopants

Photocatalytic Doping of Organic Semiconductors

A Thermally Activated And Highly Miscible Dopant For N-Type Organic Thermoelectrics

Improved Electron Transport with Reduced Contact Resistance in N-Doped Polymer Field-Effect Transistors with a Dimeric Dopant

A Solution-Processed N-Type Conducting Polymer Without Side Chains Formed Via Nonmetal-Participated Polymerization and in Situ N-Doping

Controllable Molecular Doping and Charge Transport in Solution-Processed Polymer Semiconducting Layers

Site-specific chemical doping reveals electron atmospheres at the surfaces of organic semiconductor crystals

Extending the p-Doping of Polymers to an Air Stable Lewis Acid-Base Adduct by Increasing the Acidity of the Dopant

Use of a Multiple Hydride Donor to Achieve an N-Doped Polymer with High Solvent Resistance.

Polar Side Chains Enhance Processability, Electrical Conductivity, and Thermal Stability of A Molecularly P-Doped Polythiophene

Energy Level Alignment of N-Doping Fullerenes and Fullerene Derivatives Using Air-Stable Dopant.

Efficient N‐doping of Polymeric Semiconductors Through Controlling the Dynamics of Solution‐State Polymer Aggregates