Extending the p-Doping of Polymers to an Air Stable Lewis Acid-Base Adduct by Increasing the Acidity of the Dopant

Yang Liu,Bin Zhao,Jingyu Liu,Zhongli Wang,Ziqi Liang,Weijia Dong,Chenhui Xu,Bin Wang,Zhuping Fei,Yang Han

DOI: https://doi.org/10.1021/acsapm.2c00342

2022-01-01

ACS Applied Polymer Materials

Abstract:Among various molecular p-dopants, some Lewis acids have shown recognizable doping effect by the formation of Lewis acid-base adduct for increased hole concentration in organic semiconductors. However, the doping product is often unstable in air by the interference of water. Here near amorphous conjugated polymer poly(indacenodithiophene-co-benzothiadiazole) (IDT-BT) was doped with four Lewis acid dopants of varying acidities, zinc-, borane-, carbonium- and oxonium-based molecules, respectively. Bearing stronger acidity, the oxonium dopant (C6H15O)+BF4- yielded the most air-stable Lewis acid-base adduct, which was confirmed by direct comparison of electron paramagnetic resonance and UV-vis absorption spectra of the four doping systems measured in air. A single polaron species of radical cation was produced between the IDT-BT host and the oxonium dopant, with a binding stoichiometry of 1:1 according to the model study using a benzothiadiazole-derivatized molecule. Via modulating the dopant quantity, the performance of thin-film transistors based on (C6H15O)+BF4--doped IDT-BT was optimized with enhanced mobility, significantly reduced threshold voltage, higher on/off ratio, and excellent air-stability due to the additional carriers produced by the stable Lewis acid-base adduct. Notably, while the semiconductor layer was processed in air, the (C6H15O)+BF4--doped device exhibited almost no loss of performance as compared with that under inert atmosphere. We demonstrate that the performance and air stability of Lewis acid-doped polymer and transistor devices thereby can be improved by increasing the acidity of the dopant.