Abstract:A consistent methodology is presented to extract carrier concentrations in n-type Ge from measurements of the infrared dielectric function and the Hall effect. In the case of the optical measurements, usually carried out using spectroscopic ellipsometry, the carrier concentration is affected by the doping dependence of the conductivity effective mass, which is computed using a model of the electronic density of states that accounts for non-parabolicity and is fit to electronic structure calculations. Carrier concentrations obtained from Hall measurements require a knowledge of the Hall factor, which is arbitrarily set equal to unit in most practical applications. We have calculated the Hall factor for n-Ge using a model that accounts for scattering with phonons and with ionized impurities. We show that determinations of the carrier concentration n using our computed effective mass and Hall factor virtually eliminates any systematic discrepancy between the two types of measurement. We then use these results to compute majority carrier mobilities from measured resistivity values, to compare with measurements of minority carrier mobilities, and to fit empirical expressions to the doping dependence of the mobilities that can be used to model Ge devices.

Determination of Ge Fraction and Carrier Concentration in Si1-Xgex/Si by Capacitance-Voltage Method

Determination of Ge Fraction and Carrier Concentration in Si<sub>1-X</sub>Ge<sub>x</sub>/Si by Capacitance-Voltage Method

Composition Analysis of Ge Graded Si1-xGex Alloy Films by Capacitance-Voltage Method

Composition Analysis of Ge Graded Si<sub>1-x</sub>Ge<sub>x</sub> Alloy Films by Capacitance-Voltage Method

Carriers Distribution of Si1-xGex:C Buffers Grown on Si(100) by Chemical Vapor Deposition

Surface segregation and content variation in Si1-xGex growth on Si in ultrahigh vacuum by CVD

Calculation Of Critical Layer Thickness Considering Thermal Strain In Si1-Xgex/Si Strained-Layer Heterostructures

Physical and Electrical Properties of LPCVD-SiGe Thin Films

Identification of Dominant Scattering Mechanism in Epitaxial Graphene on Sic

Direct in situ characterization of Ge surface segregation in strained Si1−xGex epitaxial thin films

Composition Determination of Si/Si1−xGex/Si by Photoreflectance Spectroscopy

Consistent optical and electrical determination of carrier concentrations for the accurate modeling of the transport properties of n-type Ge

Analysis of Capacitance-Voltage Characteristics Ofsi1−xge

Carrier depth profile of Si/SiGe/Si n-p-n HBT structural materials characterized by electrochemical capacitance-voltage method

Study of carrier transport through GexSi1−x/Si heterojunctions by using 2D Monte Carlo simulation method

Strain and Electrical Characterization of Boron-Doped Sigec Layers Grown by Chemical Vapor Deposition

Ge Segregation in Si1- x Gex Alloy Grown on Si by UHV/CVD

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

Chemical vapor deposition of Ge films on Si1-xGex:C buffers

The effects of carbon incorporation during GSMBE of Si1−yCy and Si1−x−yGexCy: growth dynamics and segregation

Effect of Strain Relief on the Si_(1-x-y) Ge_xC_y Alloys Grown by Ultra\|High Vacuum/Chemical Vapor Deposition\+*