Abstract:Surface roughening associated with strain relaxation of Si1-xGex films grown epitaxially on (100) Si substrates has been investigated using transmission electron microscopy, atomic force microscopy and x-ray diffraction. Epitaxial films 100 Å in thickness and containing 18% Ge, which are subcritical with respect to the formation of misfit dislocations, show strain relaxation through surface roughening on annealing at 700 °C. Enhanced surface grooves aligned along <100> directions are observed in films annealed at 850 °C. Strain relaxation as measured by x-ray diffraction is significantly greater at the higher temperature. Prolonged anneals at 850 °C also result in islanding. The surface roughening processes have also been studied in subcritical films with 15% Ge at 900 °C. These films also show enhanced grooving aligned along <100> directions. These observations are consistent with an anisotropic elastic analysis which indicates that grooving should occur preferentially along <100> directions. Intermixing effects in these samples have also been investigated through depth profiling using Auger Electron Spectroscopy. In addition to the above subcritical films, other films with 18% and 22% Ge and supercritical thicknesses have also been studied. For these films, surface grooving is observed along <110> directions, which suggests that these grooves are related to the formation of misfit dislocation networks. The role of these surface roughening processes in the nucleation of dislocations has also been explored.

Composition Analysis of Ge Graded Si<sub>1-x</sub>Ge<sub>x</sub> Alloy Films by Capacitance-Voltage Method

Composition Analysis of Ge Graded Si1-xGex Alloy Films by Capacitance-Voltage Method

Determination of Ge Fraction and Carrier Concentration in Si<sub>1-X</sub>Ge<sub>x</sub>/Si by Capacitance-Voltage Method

Determination of Ge Fraction and Carrier Concentration in Si1-Xgex/Si by Capacitance-Voltage Method

Cvd Growth of Ge Films on Graded Si1-Xgex: C Buffers

Ge Migration Effect of Si/Ge-N/Si(100) Heterostructure Films Probed by Grazing Incidence Fluorescence X-Ray Absorption Fine Structure

Physical and Electrical Properties of LPCVD-SiGe Thin Films

Local Structures of Si/Gen/Si(001) Hetero-Structure Films Studied by Grazing Incidence Fluorescence X-ray Absorption Fine Structure

Chemical vapor deposition of Ge films on Si1-xGex:C buffers

Studying the Lateral Composition in Ge Quantum Dots on Si(001) by Conductive Atomic Force Microscopy

Impact of the Si Content on the Electrical Properties of NiSi x Ge 1– x Source/Drain Contact Metal for Ge pMOSFETs

Effect of Strain Relief on the Si_(1-x-y) Ge_xC_y Alloys Grown by Ultra\|High Vacuum/Chemical Vapor Deposition\+*

Ge Composition and Temperature-Dependence of the Deposition of Sige Layers

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Surface Mobility Difference Between Si and Ge and Its Effect on Growth of SiGe Alloy Films and Islands.

Segregations and desorptions of Ge atoms in nanocomposite Si1−xGex films during high-temperature annealing

Surface segregation and content variation in Si1-xGex growth on Si in ultrahigh vacuum by CVD

Direct in situ characterization of Ge surface segregation in strained Si1−xGex epitaxial thin films

Structural Analysis of the SiCGe Epitaxial Layer Grown on SiC Substrate

Ge Segregation in Si1- x Gex Alloy Grown on Si by UHV/CVD

Strain Relaxation in Heteroepitaxial Si<sub>1-x</sub>Ge<sub>x</sub> Films via Surface Roughening Processes

Composition Analysis of Ge Graded Si&lt;sub&gt;1-x&lt;/sub&gt;Ge&lt;sub&gt;x&lt;/sub&gt; Alloy Films by Capacitance-Voltage Method