Abstract:In the past few decades, silicon (Si) complementary metaloxide-semiconductor (CMOS) field-effect transistors have been scaled exponentially over time for the demand of drive current enhancement and cost reduction.As the technology node advances into sub-20 nm regimes, Si CMOS encounters immense challenges from both processing and theoretical perspectives.To maintain or further improve the transistor performance, Ge-based electronic transistors are explored as Ge exhibits higher hole and electron mobilities.As compared with the Si CMOS process, the process for fabricating high performance Ge-based transistors is still under development.This special issue aims to address some of the challenges encountered in the state-of-the-art technology, for both the Si-and Ge-based electronic transistors.For Ge MOSFETs, interface engineering and gate dielectric engineering are necessary to reduce the electrical active defects in the Ge surface and the high-/Ge interface.Other than Ge, SiGe is another possible channel material for the future CMOS technology.SiGe could be obtained by directly growing on Si substrate and therefore it has better compatibility with Si CMOS technologies.Besides the research works on Ge-based transistors, this special issue also includes some papers on the Si lateral diffused MOS (LDMOS).Novel structural designs were demonstrated to improve the performance and reliability of the Si LDMOS.Last but not least, this issue also reports a work on increasing the responsivity of the Si n-MOSFET photodetectors.We hope that readers of this special issue will find not only the accurate and most updated data in the papers, but also important solutions for the existing issues in the theory and fabrication of Si-and Ge-based electronic transistors.

Deposition and Characterization of Polycrystalline Si[sub 1−x]ge[sub X] Films for CMOS Transistors Gate Electrode Applications

Process Characterization and Control of Polycrystalline SiGe As the Gate Electrode in CMOS Fabrication

Analysis of the Electrical Properties and Current Transportation Mechanism of a Metal Oxide Semiconductor (MOS) Capacitor Based on HfGdO Gate Dielectrics

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

High-Performance Polycrystalline Sige Thin-Film Transistors Using Al2o3 Gate Insulators

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Performance evaluation of polycrystalline Si1−xGex thin-film transistors fabricated by continuous-wave laser lateral crystallization on glass substrates

Si- and Ge-Based Electronic Devices

Physical and Electrical Properties of LPCVD-SiGe Thin Films

The Recrystallization Properties of Poly-Ge<sub>x</sub>Si<sub>1-x</sub>ON SiO<sub>2</sub>/Si

The Recrystallization Properties of Poly-Ge x Si 1-x ON SiO 2 /Si

The Recrystallization Properties of Poly-GexSi1-xON SiO2/Si

Impact of the Si Content on the Electrical Properties of NiSi x Ge 1– x Source/Drain Contact Metal for Ge pMOSFETs

Electrical Properties of Boron and Phosphorus Doped Polycrystalline Silicon Germanium Films

Influence of Phosphorus Diffusion on the SiO2/4H-SiC (0001) Interface During Poly Gate Formation Process

Structural and electrical characterization of Al2O3/HfO2/Al2O3 on strained SiGe

Improving the reliability of MOS capacitor on 4H-SiC (0001) with phosphorus diffused polysilicon gate

Structural and mechanical properties of polycrystalline silicon germanium for micromachining applications

Low-temperature epitaxial SiGe:P for gate-all-around n-channel metal-oxide-semiconductor devices

Doping properties of the Ion-Beam-Sputtered SiGe Film

Composition Analysis of Ge Graded Si1-xGex Alloy Films by Capacitance-Voltage Method