Abstract:Abstract Phosphorus (P) is one of the most widely used donor dopants for fabricating a low-resistivity silicon (Si) substrate. However, its volatile nature and the relatively small equilibrium segregation coefficient in Si at the melting temperature of Si impede the efficient and effective growth of low-resistivity Czochralski (CZ) Si single crystal. The primary objective of this work is to theoretically perceive the influence of germanium co-doping on the heavily P-doped Si crystal by means of CALculation of PHase Diagrams (CALPHAD) approaches and density functional theory (DFT) calculations. Phase equilibria at the Si-rich corner of the Si-Ge-P system has been thermodynamically extrapolated based on robust thermodynamic descriptions of involved binary systems, where Si-P and Ge-P have been re-assessed in this work. Phase diagram calculation results indicate that at a given P concentration (e.g. 0.33 at.% P) Ge co-doping lowers the solidification temperature of the Si(Ge, P) alloys, as well as the relevant equilibrium segregation coefficients of P in the doped Si. DFT calculations simulated the formation of (i) monovacancy in Si as well as (ii) solutions of Si(P) and Si(Ge) with one dopant substitutionally inserted in 64- and 216-atom Si cubic supercells. Binding energies were calculated and compared for Ge-Ge, Ge-P and P-P bonds positioning at the first nearest-neighbors (1NN) to the third nearest-neighbors (3NN). P-P bonds have the largest bonding energy from 1NN to 3NN configurations. The climbing image nudged elastic band method (CL-NEB) was utilized to calculate the energy barriers of P 1NN jump in the 64-atom Si cubic supercell with/without a neighboring Ge atom. With Ge present, a higher energy barrier for P 1NN jump was obtained than that without involving Ge. This indicates that Ge can impede the P diffusion in Si matrix.

Electrical Properties of Boron and Phosphorus Doped Polycrystalline Silicon Germanium Films

Dopant Activation In Poly-Si1-Xgex At Low Temperature

Doping properties of the Ion-Beam-Sputtered SiGe Film

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Dopant Activation in Poly-SI/sub1-x/Ge/subx/ at Low Temperature

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Boron and phosphorous diffusion in ion-beam-sputtering deposited SiGe films

Calculation of Phase Diagrams and First-Principles Study of Germanium Impacts on Phosphorus Distribution in Czochralski Silicon

Characterization of a Czochralski Grown Silicon Crystal Doped with 1020 Cm‐3 Germanium

Study Of Si-Ge Interdiffusion With a High Phosphorus Doping Concentration

Strain and Electrical Characterization of Boron-Doped Sigec Layers Grown by Chemical Vapor Deposition

Density Functional Theory Study on the Boron and Phosphorus Doping of Germanium Quantum Dots

Effects of phosphorous and antimony doping on thin Ge layers grown on Si

Germanium-doped Crystalline Silicon: Effects of Germanium Doping on Boron-Related Defects

Properties of silicon nanocrystals with boron and phosphorus doping fabricated via silicon rich oxide and silicon dioxide bilayers

Effects of Heavy Phosphorus-Doping on Mechanical Properties of Czochralski Silicon

Effects of Germanium on Movement of Dislocations in P-Type Czochralski Silicon

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals