Abstract:Abstract Phosphorus (P) is one of the most widely used donor dopants for fabricating a low-resistivity silicon (Si) substrate. However, its volatile nature and the relatively small equilibrium segregation coefficient in Si at the melting temperature of Si impede the efficient and effective growth of low-resistivity Czochralski (CZ) Si single crystal. The primary objective of this work is to theoretically perceive the influence of germanium co-doping on the heavily P-doped Si crystal by means of CALculation of PHase Diagrams (CALPHAD) approaches and density functional theory (DFT) calculations. Phase equilibria at the Si-rich corner of the Si-Ge-P system has been thermodynamically extrapolated based on robust thermodynamic descriptions of involved binary systems, where Si-P and Ge-P have been re-assessed in this work. Phase diagram calculation results indicate that at a given P concentration (e.g. 0.33 at.% P) Ge co-doping lowers the solidification temperature of the Si(Ge, P) alloys, as well as the relevant equilibrium segregation coefficients of P in the doped Si. DFT calculations simulated the formation of (i) monovacancy in Si as well as (ii) solutions of Si(P) and Si(Ge) with one dopant substitutionally inserted in 64- and 216-atom Si cubic supercells. Binding energies were calculated and compared for Ge-Ge, Ge-P and P-P bonds positioning at the first nearest-neighbors (1NN) to the third nearest-neighbors (3NN). P-P bonds have the largest bonding energy from 1NN to 3NN configurations. The climbing image nudged elastic band method (CL-NEB) was utilized to calculate the energy barriers of P 1NN jump in the 64-atom Si cubic supercell with/without a neighboring Ge atom. With Ge present, a higher energy barrier for P 1NN jump was obtained than that without involving Ge. This indicates that Ge can impede the P diffusion in Si matrix.

Study Of Si-Ge Interdiffusion With a High Phosphorus Doping Concentration

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Boron and phosphorous diffusion in ion-beam-sputtering deposited SiGe films

Effects of phosphorous and antimony doping on thin Ge layers grown on Si

Calculation of Phase Diagrams and First-Principles Study of Germanium Impacts on Phosphorus Distribution in Czochralski Silicon

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Impacts of Doping on Epitaxial Germanium Thin Film Quality and Si-Ge Interdiffusion

Ge/Si Interdiffusion In The Gesi Dots And Wetting Layers

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Doping properties of the Ion-Beam-Sputtered SiGe Film

Density Functional Theory Study on the Boron and Phosphorus Doping of Germanium Quantum Dots

The Growth and In-Situ Doping of SiGe/Si Strained Heterostructures by RTP/VLP-CVD

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Physical Mechanism Underlying the Enhancement Effect of Carbon in Heavily Phosphorus-Doped Czochralski Silicon Substrate on Phosphorus Out-Diffusion Within N/n+ Epitaxial Wafer

Experiments and Modeling of Mass Transport Phenomena in SiGe Devices

Effect of Phosphorus Doping on the Performance of Au/Si Inter-Diffusion

On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

Characterization of a Czochralski Grown Silicon Crystal Doped with 1020 Cm‐3 Germanium

In Situ Phosphorus Doping of Si and Si<sub>1-x</sub>Ge<sub>x</sub> Epitaxial Layers by RTP/VLP-CVD