Abstract:A nonselective epitaxial growth process for heterojunction bipolar transistors has been studied. The difference in growth rates for epitaxial and polycrystalline films could be used to monitor the thickness of the intrinsic and extrinsic base layers. The films were grown using chemical vapor deposition on Si 〈100〉 (epitaxy) and on silicon dioxide (polycrystalline) at reduced pressure (20–80 Torr) for undoped and in situ B or As doping. The depositions were carried out using silane diluted in hydrogen. Diborane and arsine were used as the source gas for dopants. For the undoped Si films, the deposition of polycrystalline films had a substantially higher rate than that of epitaxial ones. The growth rate of both epitaxial and polycrystalline depositions decreased with increasing total pressure. It was, however, linearly proportional to the silane partial pressure, pSiH4. The dependence of the growth rate on the hydrogen partial pressure was proportional to pH2−0.82 for epitaxial and to pH2−0.60 for polycrystalline depositions. The apparent activation energy was 2.1 and 1.6 eV for the epitaxial and polycrystalline depositions, respectively. A growth mechanism assuming the dissociative adsorption of silane on the Si surface, in combination with first-order hydrogen desorption kinetics, was employed to describe the experimental observations, including the differences in deposition rates, dependency on the hydrogen partial pressure as well as apparent activation energy. In situ B doping influenced neither the epitaxial nor polycrystalline depositions. In situ As doping, on the other hand, largely reduced the growth rate compared to the undoped films to such an extent that there was no appreciable difference in growth rate between the epitaxial and polycrystalline Si. The doping concentration in the epitaxial B and As films were of the order of 1018 cm−3, identical deposition conditions yielded a 5 and 20 times larger dopant incorporation in the B and As doped polycrystalline films, respectively.

In Situ Phosphorus Doping of Si and Si<sub>1-x</sub>Ge<sub>x</sub> Epitaxial Layers by RTP/VLP-CVD

Low-Temperature Epitaxy of Phosphorus Doped Si and Si1-Xgex Films by Rtp/Vlp-Cvd

High Phosphorus Doping of Epitaxial Silicon at Low Temperature and Very Low Pressure

In-situ Phosphorous-Doped SiGe Layer on Si Substrate by Reactive Thermal Chemical Vapor Deposition at Low Temperature

In Situ Doped Phosphorus Diffusion Behavior in Germanium Epilayer on Silicon Substrate by Ultra-High Vacuum Chemical Vapor Deposition

The Growth and In-Situ Doping of SiGe/Si Strained Heterostructures by RTP/VLP-CVD

Polysilicon in situ phosphorus doping control over large concentration range using low temperature, low pressure chemical vapour deposition growth process

Monolayer Doping: A Shallow Acceptor of Phosphorous Doped in MoSe <sub>2</sub> Monolayer (Adv. Electron. Mater. 1/2020)

Physical Mechanism Underlying the Enhancement Effect of Carbon in Heavily Phosphorus-Doped Czochralski Silicon Substrate on Phosphorus Out-Diffusion Within N/n+ Epitaxial Wafer

High concentration phosphorus doping of polycrystalline silicon by low temperature direct vapor phase diffusion of phosphine followed by rapid thermal annealing

Dopant Activation In Poly-Si1-Xgex At Low Temperature

Spin-on Doping of Phosphorus on Ge with a 9 Nm Amorphous Si Capping Layer to Achieve N+/p Shallow Junctions Through Rapid Thermal Annealing

Properties of N-Ge Epilayer on Si Substrate with In-Situ Doping Technology

Effects of phosphorous and antimony doping on thin Ge layers grown on Si

Study Of Si-Ge Interdiffusion With a High Phosphorus Doping Concentration

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Characterization of in Situ Phosphorus‐Doped Polycrystalline Silicon Films Grown by Disilane‐Based Low‐Pressure Chemical Vapor Deposition

Doped Silicon Nanocrystals From Organic Dopant Precursor By A Sicl4-Based High Frequency Nonthermal Plasma

Comprehensive Understanding on Phosphorus Precipitation in Heavily Phosphorus-Doped Czochralski Silicon

Chemical Vapor Deposition of Undoped and In-Situ Boron- and Arsenic-Doped Epitaxial and Polycrystalline Silicon Films Grown Using Silane at Reduced Pressure

Mineral Interface Doping: Hydroxyapatite Deposited on Silicon to Trigger the Electronic Properties