Abstract:Suppression of threading dislocations (TDs) in thin germanium (Ge) layers grown on silicon (Si) substrates has been critical for realizing high-performance Si-based optoelectronic and electronic devices. An advanced growth strategy is desired to minimize the TD density within a thin Ge buffer layer in Ge-on-Si systems. In this work, we investigate the impact of P dopants in 500-nm thin Ge layers, with doping concentrations from 1 to 50 × 10 18 cm −3 . The introduction of P dopants has efficiently promoted TD reduction, whose potential mechanism has been explored by comparing it to the well-established Sb-doped Ge-on-Si system. P and Sb dopants reveal different defect-suppression mechanisms in Ge-on-Si samples, inspiring a novel co-doping technique by exploiting the advantages of both dopants. The surface TDD of the Ge buffer has been further reduced by the co-doping technique to the order of 10 7 cm −2 with a thin Ge layer (of only 500 nm), which could provide a high-quality platform for high-performance Si-based semiconductor devices.

What problem does this paper attempt to address?

This paper aims to solve the problem of high dislocation density in germanium (Ge) thin films grown on silicon substrates. Specifically, the research focuses on reducing the density of threading dislocations (TDs) through phosphorus (P) doping and antimony (Sb) doping in 500 - nanometer - thick Ge thin films grown on silicon substrates. The paper explores the effects of different concentrations of P and Sb doping on reducing TD density and proposes a new P - and - Sb co - doping technique to further reduce TD density and improve surface morphology. ### Main research questions 1. **Reducing threading dislocation density**: How can P and Sb doping effectively reduce the threading dislocation density in Ge thin films grown on silicon substrates? 2. **Optimizing doping concentration**: Determine the optimal P and Sb doping concentrations to achieve the best TD density reduction effect. 3. **Co - doping technique**: Explore the comprehensive effects of P - and - Sb co - doping on the quality of Ge thin films and propose a new co - doping technique to further improve the quality of Ge thin films. ### Research background - **Development of Si - based optoelectronic devices**: The development of Si - based optoelectronic integrated circuits (OEIC) and photonic integrated circuits (PIC) requires high - quality semiconductor materials, but Si is not suitable as an on - chip light source due to its indirect bandgap. - **Advantages and challenges of Ge**: Ge has a quasi - direct bandgap and is suitable for use in optoelectronic devices, but when grown on Si substrates, it faces a large lattice mismatch (4.2%), resulting in a large number of dislocations and affecting device performance. - **Limitations of existing methods**: Although the traditional thick buffer layer method can reduce the dislocation density, it has problems such as thermal cracking and high cost, so more effective growth strategies need to be found. ### Research methods - **P and Sb doping experiments**: Through molecular beam epitaxy (MBE) method, 500 - nanometer - thick Ge thin films are grown on silicon substrates and doped with different concentrations of P and Sb respectively. - **Characterization techniques**: Atomic force microscopy (AFM), high - resolution X - ray diffraction (HR - XRD), electron channel contrast imaging (ECCI) and transmission electron microscopy (TEM) are used to characterize the surface morphology, structural strain and dislocation density of the samples. - **Co - doping technique**: Try P - and - Sb co - doping, optimize the doping concentration combination, and evaluate the effects of co - doping on dislocation density and surface roughness. ### Main findings - **Effect of P doping**: P doping significantly reduces the dislocation density. The optimal doping concentration is \(5\times10^{18}\, \text{cm}^{-3}\), and the dislocation density is reduced from \(2.5\times10^{8}\, \text{cm}^{-2}\) to \(1.3\times10^{8}\, \text{cm}^{-2}\). - **Effect of Sb doping**: Sb doping also significantly reduces the dislocation density. The optimal doping concentration is \(3\times10^{18}\, \text{cm}^{-3}\), and the dislocation density is reduced to \(1.2\times10^{8}\, \text{cm}^{-2}\). - **Co - doping technique**: P - and - Sb co - doping further reduces the dislocation density to \(10^{7}\, \text{cm}^{-2}\), and at the same time, the surface roughness is reduced to \(0.7\, \text{nm}\). ### Conclusion Through P and Sb doping and co - doping techniques, the quality of Ge thin films grown on silicon substrates can be significantly improved, the dislocation density can be reduced, and the surface morphology can be improved. These results provide important technical support for the development of Si - based optoelectronic devices.

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