Abstract:Abstract Phosphorus (P) is one of the most widely used donor dopants for fabricating a low-resistivity silicon (Si) substrate. However, its volatile nature and the relatively small equilibrium segregation coefficient in Si at the melting temperature of Si impede the efficient and effective growth of low-resistivity Czochralski (CZ) Si single crystal. The primary objective of this work is to theoretically perceive the influence of germanium co-doping on the heavily P-doped Si crystal by means of CALculation of PHase Diagrams (CALPHAD) approaches and density functional theory (DFT) calculations. Phase equilibria at the Si-rich corner of the Si-Ge-P system has been thermodynamically extrapolated based on robust thermodynamic descriptions of involved binary systems, where Si-P and Ge-P have been re-assessed in this work. Phase diagram calculation results indicate that at a given P concentration (e.g. 0.33 at.% P) Ge co-doping lowers the solidification temperature of the Si(Ge, P) alloys, as well as the relevant equilibrium segregation coefficients of P in the doped Si. DFT calculations simulated the formation of (i) monovacancy in Si as well as (ii) solutions of Si(P) and Si(Ge) with one dopant substitutionally inserted in 64- and 216-atom Si cubic supercells. Binding energies were calculated and compared for Ge-Ge, Ge-P and P-P bonds positioning at the first nearest-neighbors (1NN) to the third nearest-neighbors (3NN). P-P bonds have the largest bonding energy from 1NN to 3NN configurations. The climbing image nudged elastic band method (CL-NEB) was utilized to calculate the energy barriers of P 1NN jump in the 64-atom Si cubic supercell with/without a neighboring Ge atom. With Ge present, a higher energy barrier for P 1NN jump was obtained than that without involving Ge. This indicates that Ge can impede the P diffusion in Si matrix.

Density Functional Theory Study on the Boron and Phosphorus Doping of Germanium Quantum Dots

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Nonthermal Plasma Synthesized Boron-Doped Germanium Nanocrystals

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Doping silicon nanocrystals with boron and phosphorus

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Structural Evolution and Electronic Properties of Germanium-Doped Boron Clusters and Their Anions: GeB N 0/− ( N = 6–20)

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Doping Si Nanocrystals Embedded in Sio2 with P in the Framework of Density Functional Theory

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Calculation of Phase Diagrams and First-Principles Study of Germanium Impacts on Phosphorus Distribution in Czochralski Silicon

Promising modulation of self-assembled Ge-rich QDs by ultra-heavy phosphorus doping

Effects of phosphorous and antimony doping on thin Ge layers grown on Si

Strong Valence Electrons Dependent and Logical Relations of Elemental Impurities in 2D Binary Semiconductor: a Case of GeP3 Monolayer from Ab Initio Studies.

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Influence of B doping and N doping on structure and electronic properties of graphene

Germanium-doped Crystalline Silicon: Effects of Germanium Doping on Boron-Related Defects

Density Functional Investigation of [001] and [111] SiNWs and the Effect of Doping with Boron and Phosphorus