Abstract:The Ge quantum dots on Si substrate are prepared by ion beam sputtering deposition (IBSD). The growth evolution is observed to experience two stages with Ge coverage (θ) increasing. When θ increases from 6 monolayers (ML) to 10.5 ML, the average base width and height of quantum dots both increase, and the dome shape dots with small aspect ratio values are obtained. As the dots grow up, Ge atoms are also accumulated in the wetting layer, which contributes to the observed quantum dot density increasing mildly during this stage. When θ is in a range from 11.5 ML to 17 ML, vertical growth dominates the dot evolution. Another dome shape quantum dots are prepared with large aspect ratio values. Ge coverage gain results in the dot density increasing rapidly. A wetting layer decomposition process is demonstrated to give significant effect on that. The growth transition occurs as θ increases from 10.5 ML to 11.5 ML, and the dot density is enhanced 6.4 times in this course. So it is concluded that the evolution of Ge quantum dot prepared by IBSD is very different from that deposited on the thermal equilibrium condition. The observed characters of the dot shape and size distribution result from the kinetic behaviors of the surface atoms which are restricted by the thermodynamic limitation. Ge coverage is the one of the most important factors which can change the free energy. On the other hand, the energic sputtered atom bombardment enhances surface diffusion and defers nucleation of three-dimensional islands until the superstrain wetting layer is formed, which can also change the system free energy and the surface atom kinetic behaviors. So the growth evolution of Ge quantum dots prepared by IBSD is related so much with the effect of atom bombardment on the quantum dot growth.

Phosphorus-mediated growth of Ge quantum dots on Si(001)

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Boron-mediated growth of Ge quantum dots on Si(100) substrate

Deposition of high-density Ge quantum dots on ultra-thin SiO2/Si(1 1 1) film surface

Promising modulation of self-assembled Ge-rich QDs by ultra-heavy phosphorus doping

Mechanism for Coarsening of P-mediated Ge Quantum Dots During In-Situ Annealing

Deposition of high-density Ge quantum dots on ultra-thin SiO2/Si(111) film surface

Densely packed Ge quantum dots grown on SiO2/Si substrate☆

Influence of Boron Atom on Growth of Ge Quantum Dots on Si(100)

Growth of Ge quantum dots on SiO2/Si(111) surface

Growth of Ge Quantum Dot at the Mix-Crystal Interface Self-Induced on the Ion Beam Sputtering Deposition

Factors Influencing Epitaxial Growth of Three-Dimensional Ge Quantum Dot Crystals on Pit-Patterned Si Substrate.

Growth Control of Ge/Si Quantum Dots

Growth Evolution of Ge Quantum Dot Modulated by the Atom Bombardment During Ion Beam Sputtering Deposition

Study on crystal growth of Ge/Si quantum dots at different Ge deposition by using magnetron sputtering technique

Growth of Ge Quantum Dot Mediated by Boron on Ge Wetting Layer

A two-stage molecular beam epitaxial growth method to fabricate small and uniform Ge quantum dots on Si(100)

Evolution of Ge/Si Quantum Dots Self-Assembled Grown by Ion Beam Sputtering

Small-Size Ge/Si(001) Quantum Dots Grown By Molecular Boam Epitaxy

Current density effects on the growth of self-assembled Ge/Si quantum dots prepared by ion beam sputtering deposition