Abstract:We investigated the molecular beam epitaxy growth of three-dimensional (3D) Ge quantum dot crystals (QDCs) on periodically pit-patterned Si substrates. A series of factors influencing the growth of QDCs were investigated in detail and the optimized growth conditions were found. The growth of the Si buffer layer and the first quantum dot (QD) layer play a key role in the growth of QDCs. The pit facet inclination angle decreased with increasing buffer layer thickness, and its optimized value was found to be around 21 degrees, ensuring that all the QDs in the first layer nucleate within the pits. A large Ge deposition amount in the first QD layer favors strain build-up by QDs, size uniformity of QDs and hence periodicity of the strain distribution; a thin Si spacer layer favors strain correlation along the growth direction; both effects contribute to the vertical ordering of the QDCs. Results obtained by atomic force microscopy and cross-sectional transmission electron microscopy showed that 3D ordering was achieved in the Ge QDCs with the highest ever areal dot density of 1.2 x 10(10) cm(-2), and that the lateral and the vertical interdot spacing were similar to 10 and similar to 2.5 nm, respectively.

Influence of Boron Atom on Growth of Ge Quantum Dots on Si(100)

Boron-mediated growth of Ge quantum dots on Si(100) substrate

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Phosphorus-mediated growth of Ge quantum dots on Si(001)

Effect of Boron on the Surface and Optical Properties for (b)inas/gaas Self-Assembled Quantum Dots Grown by MOCVD

Effect of Boron Pre-Deposition on Size Distribution of Self-Assembled Ge Islands Fabricated by UHV/CVD

Uniform Dome-Shaped Self-Assembled Ge Islands by UHV/CVD after Boron Pre-Deposition

Density Functional Theory Study on the Boron and Phosphorus Doping of Germanium Quantum Dots

Densely packed Ge quantum dots grown on SiO2/Si substrate☆

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Deposition of high-density Ge quantum dots on ultra-thin SiO2/Si(111) film surface

Growth of Ge quantum dots on SiO2/Si(111) surface

Deposition of high-density Ge quantum dots on ultra-thin SiO2/Si(1 1 1) film surface

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Impact of Germanium Co-Doping on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon

Factors Influencing Epitaxial Growth of Three-Dimensional Ge Quantum Dot Crystals on Pit-Patterned Si Substrate.

Small-Size Ge/Si(001) Quantum Dots Grown By Molecular Boam Epitaxy

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Study of Si and Ge growth on Si(100) surface

A Two-Stage Molecular Beam Epitaxial Growth Method to Fabricate Small and Uniform Ge Quantum Dots on Si(1 0 0)